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1MB10D-120 IGBT (IC) Datasheet. Cross Reference Search. 1MB10D-120 Equivalent

Type Designator: 1MB10D-120

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 135W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 3.5V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 16A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 1200

Maximum collector capacity (Cc), pF:

Package: TO3P

1MB10D-120 Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: 12N60C3D , 14N36GVL , 1MB03D-120 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , RJH60F5DPK , 1MB15D-060 , 1MB20-060 , 1MB20D-060 , 1MB30-060 , 1MBC03-120 , 1MBC05-060 , 1MBC05D-060 , 1MBC10-060 .

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 1MB10D-120 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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