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G10N50E1 IGBT. Datasheet pdf. Equivalent

Type Designator: G10N50E1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 60W

Maximum Collector-Emitter Voltage |Vce|, V: 500V

Collector-Emitter saturation Voltage |Vcesat|, V: 4.5V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 10A

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 50

Package: TO220

G10N50E1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

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Datasheet: CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , G10N40 , G10N40C1 , G10N40E1 , G10N50 , G10N50C1 , GT15Q101 , G12N40C1 , G12N40C1D , G12N40E1 , G12N40E1D , G12N50C1 , G12N50C1D , G12N50E1 , G12N50E1D .

 


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IGBT: DM2G400SH6N | DM2G400SH6A | DM2G300SH6NE | DM2G300SH6A | DM2G300SH12A | DM2G200SH6N | DM2G200SH6A | DM2G200SH12AE | DM2G200SH12A | DM2G150SH6NE |

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