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IXGN200N60A2 IGBT (IC) Datasheet. Cross Reference Search. IXGN200N60A2 Equivalent

Type Designator: IXGN200N60A2

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.35V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 200A

Maximum junction temperature (Tj), °C:

Rise time, nS: 250

Maximum collector capacity (Cc), pF:

Package: SOT227B

IXGN200N60A2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGN200N60A2 PDF doc:

1.1. ixgn200n60b.pdf Size:561K _ixys

IXGN200N60A2
IXGN200N60A2

IXGN 200N60B VCES = 600 V HiPerFASTTM IGBT IC25 = 200 A VCE(sat) = 2.1 V E Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E VCES TJ = 25C to 150C 600 V G VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25C 200 A C IL Terminal Current Limit 100 A IC90 TC = 90C 120 A G = Gate, C = Collector, E = Emitter either em

1.2. ixgn200n60b3.pdf Size:186K _ixys

IXGN200N60A2
IXGN200N60A2

VCES = 600V IXGN200N60B3 GenX3TM 600V IGBT IC110 = 200A ? VCE(sat) ? ? 1.50V ? ? Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V E VGEM Transient 30 V C IC25 TC = 25C 300 A IC110 TC = 110C 200 A G = Ga

1.3. ixgn200n60a2.pdf Size:553K _ixys

IXGN200N60A2
IXGN200N60A2

IXGN 200N60A2 VCES = 600 V IGBT IC25 = 200 A Optimized for Switching VCE(sat) = 1.35 V up to 5 kHz Preliminary Data Sheet E Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E VCES TJ = 25C to 150C 600 V G VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25C 200 A C IC110 TC = 110C 100 A ICM TC = 25C, 1 ms 400 A G

1.4. ixgn200n60b.pdf Size:559K _igbt

IXGN200N60A2
IXGN200N60A2

IXGN 200N60B VCES = 600 V HiPerFASTTM IGBT IC25 = 200 A VCE(sat) = 2.1 V E Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V E IC25 TC = 25°C 200 A C IL Terminal Current Limit 100 A IC90 TC = 90°C 120 A G = Gate, C = Collector, E = Emitter

1.5. ixgn200n60b3.pdf Size:184K _igbt

IXGN200N60A2
IXGN200N60A2

VCES = 600V IXGN200N60B3 GenX3TM 600V IGBT IC110 = 200A ≤ VCE(sat) ≤ ≤ 1.50V ≤ ≤ Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V E VGEM Transient ±30 V C IC25 TC = 25°C 300 A IC110 TC

See also transistors datasheet: IXGK75N250 , IXGK82N120A3 , IXGK82N120B3 , IXGL200N60B3 , IXGL75N250 , IXGN100N170 , IXGN120N60A3 , IXGN120N60A3D1 , RJP30H1DPD , IXGN200N60B3 , IXGN320N60A3 , IXGN400N30A3 , IXGN400N60A3 , IXGN400N60B3 , IXGN50N120C3H1 , IXGN60N60C2 , IXGN60N60C2D1 .

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