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IXGQ50N60C4D1 IGBT (IC) Datasheet. Cross Reference Search. IXGQ50N60C4D1 Equivalent

Type Designator: IXGQ50N60C4D1

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.5V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 90A

Maximum junction temperature (Tj), °C:

Rise time, nS: 63

Maximum collector capacity (Cc), pF:

Package: TO3P

IXGQ50N60C4D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGQ50N60C4D1 PDF doc:

1.1. ixgq50n60c4d1.pdf Size:196K _igbt_a

IXGQ50N60C4D1
IXGQ50N60C4D1

VCES = 600V High-Gain IGBTs IXGQ50N60C4D1 IC110 = 46A w/ Diode IXGH50N60C4D1 ≤ ≤ VCE(sat) ≤ 2.3V ≤ ≤ High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings Tab VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V TO-247 (IXGH) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 90 A IC110 TC = 110

1.2. ixgq50n60b4d1.pdf Size:198K _igbt_a

IXGQ50N60C4D1
IXGQ50N60C4D1

VCES = 600V High-Gain IGBTs IXGH50N60B4D1 IC110 = 50A w/Diode IXGQ50N60B4D1 ≤ ≤ VCE(sat) ≤ 1.8V ≤ ≤ Low-Vsat PT Trench IGBTs TO-247 (IXGH) G C Tab E Symbol Test Conditions Maximum Ratings TO-3P (IXGQ) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C E IC25 TC = 25°C 100 A Tab IC

See also transistors datasheet: IXGP4N100 , IXGP50N60B4 , IXGP50N60C4 , IXGP7N60BD1 , IXGP7N60CD1 , IXGQ20N120B , IXGQ50N60B4D1 , IXGQ50N60B4D1 , STGB10NB37LZ , IXGR120N60B , IXGR120N60C2 , IXGR12N60C , IXGR16N170AH1 , IXGR24N120C3D1 , IXGR24N60C , IXGR32N170AH1 , IXGR32N170H1 .

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IGBT: STGWT60V60DF | STGWT60H65FB | STGWT60H65DFB | STGWT60H60DLFB | STGWT28IH125DF | STGWA60H65DFB | STGWA25S120DF3 | STGWA25H120F2 | STGWA25H120DF2 | STGW60V60F |

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