IXGR120N60C2 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IXGR120N60C2

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.7V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 75A

Maximum junction temperature (Tj), °C:

Rise time, nS: 80

Maximum collector capacity (Cc), pF:

Package: ISOPLUS247

Equivalent transistors for IXGR120N60C2

IXGR120N60C2 PDF document for downloads:

1.1. ixgr120n60b.pdf Size:560K _ixys

HiPerFASTTM IGBT IXGR 120N60B VCES = 600 V IC25 = 156 A ISOPLUS247TM (Electrically Isolated Back Surface) VCE(sat) = 2.1 V Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Backside* IC25 TC = 25°C 156 A IC110 TC = 110°C 102 A IL(RMS) External lead limit 76 A G = Gate, C = Collector E = Emitter ICM TC = 25°C, 1 ms 300 A * Patent pending SSOA VGE = 15 V, TVJ = 125°C, RG = 2.4 ? ICM = 200 A (RBSOA) Clamped inductive load @ 0.8 VCES PC TC = 25°C 520 W Features TJ -55 ... +150 °C DCB Isolated mounting tab TJM 150 °C Meets TO-247AD package Outline Tstg -55 ... +150 °C High current handling capability Maximum lead temperature for soldering 300 °C Latest generation HDMOSTM process 1.6 mm (0.062 in.) from case for 10 s MOS Gate turn-on VISOL 50/60 Hz, RMS, t = 1minute leads-to-tab 2500 V - drive simplicity

1.2. ixgr120n60c2.pdf Size:94K _ixys

ADVANCE TECHNICAL INFORMATION VCES = 600 V HiPerFASTTM IGBT IXGR 120N60C2 IC110 = 60 A ISOPLUS247TM VCE(sat) = 2.7 V Lightspeed 2TM Series tfi(typ) = 45 ns (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25°C to 150°C 600 V (IXGR) VCGR TJ = 25°C to 150°C; RGE = 1 M? 600 V C (ISOLATED TAB) VGES Continuous ± 20 V E VGEM Transient ± 30 V G = Gate C = Collector E = Emitter IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C 60 A Features ICM TC = 25°C, 1 ms 500 A DCB Isolated mounting tab SSOA VGE = 15 V, TVJ = 125°C, RG = 4.7 ? ICM = 200 A Meets TO-247AD package Outline High current handling capability (RBSOA) Clamped inductive load @ VCE ? 600 V Latest generation HDMOSTM process MOS Gate turn-on PC TC = 25°C 300 W - drive simplicity TJ -55 ... +150 °C TJM 150 °C Applications Tstg -55 ... +150 °C Uninterruptible power supplies (UPS) VISOL 50/60 Hz, RMS, t = 1minute 2500 V~ Swi

5.1. ixgr16n170ah1.pdf Size:522K _ixys

Advance Technical Data IXGR 16N170AH1 VCES = 1700 V High Voltage IC25 = 16 A IGBT with Diode VCE(sat) = 5.0 V Electrically Isolated Tab tfi(typ) = 40 ns Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) VCES TJ = 25°C to 150°C 1700 V E153432 VCGR TJ = 25°C to 150°C; RGE = 1 M? 1700 V VGES Continuous ±20 V VGEM Transient ±30 V G C ISOLATED TAB IC25 TC = 25°C16 A E IC90 TC = 90°C8 A G = Gate, C = Collector, IF90 15 A E = Emitter ICM TC = 25°C, 1 ms 40 A SSOA VGE = 15 V, TVJ = 125°C, RG = 10? ICM = 40 A (RBSOA) Clamped inductive load @ 0.8 VCES tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22? 10 µs PC TC = 25°C 120 W VISOL 50/60 Hz, rms, 1 minute 2500 ~V Features Electrically isolated tab TJ -55 ... +150 °C International standard package outline TJM 150 °C High current handling capability Tstg -55 ... +150 °C MOS Gate turn-on - drive simplicity FC Mounting force 22...130/5.30 N/lb Rugged NPT structure Maximum lead temperat

See also transistors datasheet: IXGP50N60C4 , IXGP7N60BD1 , IXGP7N60CD1 , IXGQ20N120B , IXGQ50N60B4D1 , IXGQ50N60B4D1 , IXGQ50N60C4D1 , IXGR120N60B , CT75AM-12 , IXGR12N60C , IXGR16N170AH1 , IXGR24N120C3D1 , IXGR24N60C , IXGR32N170AH1 , IXGR32N170H1 , IXGR32N90B2D1 , IXGR35N120B .

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