IXGR32N170H1 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IXGR32N170H1

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1700V

Collector-emitter saturation voltage |Ucesat|, V: 3.5V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 38A

Maximum junction temperature (Tj), °C:

Rise time, nS: 250

Maximum collector capacity (Cc), pF:

Package: ISOPLUS247

Equivalent transistors for IXGR32N170H1

IXGR32N170H1 PDF document for downloads:

3.1. ixgr32n90b2d1.pdf Size:199K _ixys

Advance Technical Information VCES = 900 V IXGR 32N90B2D1 HiPerFASTTM IGBT IC25 = 47 A with Fast Diode VCE(sat) = 2.9 V tfi typ = 150 ns Electrically Isolated Base Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 M? 900 V VGES Continuous ±20 V VGEM Transient ±30 V G C IC25 TC = 25OC47 A ISOLATED TAB E IC110 TC = 110OC22 A G = Gate C = Collector E = Emitter ICM TC = 25OC, 1 ms 200 A SSOA VGE= 15 V, TVJ = 125OC, RG = 10 ? ICM = 64 A Features (RBSOA) Clamped inductive load: VCL < 600V PC TC = 25OC 160 W Electrically isolated mounting tab O High frequency IGBT TJ -55 ... +150 C High current handling capability O TJM 150 C MOS Gate turn-on O Tstg -55 ... +150 C - drive simplicity O Maximum lead temperature for soldering 300 C Applications 1.6 mm (0.062 in.) from case for 10 s PFC circuits VISOL 50/60Hz, RMS, T= I minute 2500 V~ Uninterruptible power supplies

3.2. ixgr32n60cd1.pdf Size:571K _ixys

VCES = 600 V HiPerFASTTM IGBT IXGR 32N60CD1 IC25 = 45 A with Diode VCE(SAT) = 2.7 V ISOPLUS247TM tfi(typ) = 55 ns (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C IC25 TC = 25°C45 A E Isolated backside* IC90 TC = 90°C28 A ICM TC = 25°C, 1 ms 120 A SSOA VGE = 15 V, TVJ = 125°C, RG = 10 ? ICM = 64 A G = Gate, C = Collector, (RBSOA) Clamped inductive load, L = 100 µH @ 0.8 VCES E = Emitter, TAB = Collector PC TC = 25°C 140 W TJ -55 ... +150 °C * Patent pending TJM 150 °C Features Tstg -55 ... +150 °C Maximum Lead and Tab temperature for soldering 300 °C DCB Isolated mounting tab 1.6 mm (0.062 in.) from case for 10 s Meets TO-247AD package Outline High current handling capability VISOL 50/60 Hz, RMS t = 1 min leads-to housing 2500 V~ Latest generation

5.1. ixgr35n120b_ixgr35n120c.pdf Size:49K _ixys

VCES IC25 VCE(sat) tfi(typ) HiPerFASTTM IGBT IXGR 35N120B 1200 V 70 A 3.3 V 160 ns ISOPLUS247TM 1200 V 70 A 4.0 V 115 ns IXGR 35N120C (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 1200 V VGES Continuous ±20 V G VGEM Transient ±30 V C E Isolated Backside* IC25 TC = 25°C 70 A IC90 TC = 90°C 35 A G = Gate, C = Collector E = Emitter ICM TC = 25°C, 1 ms 140 A * Patent pending SSOA VGE = 15 V, TVJ = 125°C, RG = 10 ? ICM = 90 A (RBSOA) Clamped inductive load @ 0.8 VCES PC TC = 25°C 200 W TJ -55 ... +150 °C TJM 150 °C Features Tstg -55 ... +150 °C DCB Isolated mounting tab Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s Meets TO-247AD package Outline High current handling capability Weight 5 g MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values Uninte

See also transistors datasheet: IXGQ50N60C4D1 , IXGR120N60B , IXGR120N60C2 , IXGR12N60C , IXGR16N170AH1 , IXGR24N120C3D1 , IXGR24N60C , IXGR32N170AH1 , HGTG20N60B3D , IXGR32N90B2D1 , IXGR35N120B , IXGR35N120BD1 , IXGR35N120C , IXGR39N60B , IXGR39N60BD1 , IXGR40N60B , IXGR40N60B2 .

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