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G12N50E1 IGBT (IC) Datasheet. Cross Reference Search. G12N50E1 Equivalent

Type Designator: G12N50E1

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 75W

Maximum collector-emitter voltage |Uce|, V: 500V

Collector-emitter saturation voltage |Ucesat|, V: 4.5V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 12A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 50

Maximum collector capacity (Cc), pF:

Package: TO218

G12N50E1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: G10N50C1 , G10N50E1 , G12N40C1 , G12N40C1D , G12N40E1 , G12N40E1D , G12N50C1 , G12N50C1D , IXGH40N60B2D1 , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D .

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IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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