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IXGR35N120C IGBT (IC) Datasheet. Cross Reference Search. IXGR35N120C Equivalent

Type Designator: IXGR35N120C

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W:

Maximum Collector-Emitter Voltage |Vce|, V: 1200V

Collector-Emitter saturation Voltage |Vcesat|, V: 4V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 70A

Maximum Junction Temperature (Tj), °C:

Rise Time, nS: 115

Maximum Collector Capacity (Cc), pF:

Package: ISOPLUS247

IXGR35N120C Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGR35N120C PDF doc:

1.1. ixgr35n120b_ixgr35n120c.pdf Size:49K _ixys

IXGR35N120C
IXGR35N120C

VCES IC25 VCE(sat) tfi(typ) HiPerFASTTM IGBT IXGR 35N120B 1200 V 70 A 3.3 V 160 ns ISOPLUS247TM 1200 V 70 A 4.0 V 115 ns IXGR 35N120C (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V VGES Continuous 20 V G VGEM Transient 30 V C E Isolated Backside* IC25 TC = 25C

1.2. ixgr35n120bd1.pdf Size:517K _igbt_a

IXGR35N120C
IXGR35N120C

Advanced Technical Information IXGR 35N120BD1 High Voltage IGBT VCES = 1200 V with Diode IC25 = 54 A (Electrically Isolated Back Surface) VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V (TAB) VGEM Transient ±30 V G C E IC25 TC = 25

1.3. ixgr35n120b.pdf Size:47K _igbt_a

IXGR35N120C
IXGR35N120C

 VCES IC25 VCE(sat) tfi(typ) HiPerFASTTM IGBT IXGR 35N120B 1200 V 70 A 3.3 V 160 ns ISOPLUS247TM 1200 V 70 A 4.0 V 115 ns IXGR 35N120C (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V G VGEM Transient ±30 V C E Isolated Backside* IC25

1.4. ixgr35n120c.pdf Size:47K _igbt_a

IXGR35N120C
IXGR35N120C

 VCES IC25 VCE(sat) tfi(typ) HiPerFASTTM IGBT IXGR 35N120B 1200 V 70 A 3.3 V 160 ns ISOPLUS247TM 1200 V 70 A 4.0 V 115 ns IXGR 35N120C (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V G VGEM Transient ±30 V C E Isolated Backside* IC25

See also transistors datasheet: IXGR16N170AH1 , IXGR24N120C3D1 , IXGR24N60C , IXGR32N170AH1 , IXGR32N170H1 , IXGR32N90B2D1 , IXGR35N120B , IXGR35N120BD1 , IRGP4062D , IXGR39N60B , IXGR39N60BD1 , IXGR40N60B , IXGR40N60B2 , IXGR40N60B2D1 , IXGR40N60C , IXGR40N60C2 , IXGR40N60C2D1 .

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IGBT: IXXH60N65C4 | IXXH60N65B4H1 | IXXH60N65B4 | IXXH40N65B4H1 | IXXH40N65B4 | IXXH30N65B4 | IXXH30N60C3 | IXXH30N60B3 | IXXH150N60C3 | IXXH110N65C4 |

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