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IXGR39N60B IGBT (IC) Datasheet. Cross Reference Search. IXGR39N60B Equivalent

Type Designator: IXGR39N60B

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W:

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.8V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 66A

Maximum Junction Temperature (Tj), °C:

Rise Time, nS: 200

Maximum Collector Capacity (Cc), pF:

Package: ISOPLUS247

IXGR39N60B Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGR39N60B PDF doc:

1.1. ixgr39n60bd1.pdf Size:511K _igbt_a

IXGR39N60B
IXGR39N60B

VCES = 600 V IXGR 39N60B HiPerFASTTM IGBT IC25 = 66 A IXGR 39N60BD1 ISOPLUS247TM VCE(sat) = 1.8 V (Electrically Isolated Backside) tfi(typ) = 200 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Back

1.2. ixgr39n60b.pdf Size:511K _igbt_a

IXGR39N60B
IXGR39N60B

VCES = 600 V IXGR 39N60B HiPerFASTTM IGBT IC25 = 66 A IXGR 39N60BD1 ISOPLUS247TM VCE(sat) = 1.8 V (Electrically Isolated Backside) tfi(typ) = 200 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Back

5.1. ixgr32n90b2d1.pdf Size:199K _ixys

IXGR39N60B
IXGR39N60B

Advance Technical Information VCES = 900 V IXGR 32N90B2D1 HiPerFASTTM IGBT IC25 = 47 A with Fast Diode VCE(sat) = 2.9 V tfi typ = 150 ns Electrically Isolated Base Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 M? 900 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25OC47 A ISOLATED TAB E

5.2. ixgr35n120b_ixgr35n120c.pdf Size:49K _ixys

IXGR39N60B
IXGR39N60B

VCES IC25 VCE(sat) tfi(typ) HiPerFASTTM IGBT IXGR 35N120B 1200 V 70 A 3.3 V 160 ns ISOPLUS247TM 1200 V 70 A 4.0 V 115 ns IXGR 35N120C (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V VGES Continuous 20 V G VGEM Transient 30 V C E Isolated Backside* IC25 TC = 25C

5.3. ixgr32n60cd1.pdf Size:571K _ixys

IXGR39N60B
IXGR39N60B

VCES = 600 V HiPerFASTTM IGBT IXGR 32N60CD1 IC25 = 45 A with Diode VCE(SAT) = 2.7 V ISOPLUS247TM tfi(typ) = 55 ns (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25C45 A E Is

5.4. ixgr32n90b2d1.pdf Size:195K _igbt_a

IXGR39N60B
IXGR39N60B

Advance Technical Information VCES = 900 V IXGR 32N90B2D1 HiPerFASTTM IGBT IC25 = 47 A with Fast Diode VCE(sat) = 2.9 V tfi typ = 150 ns Electrically Isolated Base Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V G C IC25 TC = 25OC47 A ISOLATED T

5.5. ixgr35n120bd1.pdf Size:517K _igbt_a

IXGR39N60B
IXGR39N60B

Advanced Technical Information IXGR 35N120BD1 High Voltage IGBT VCES = 1200 V with Diode IC25 = 54 A (Electrically Isolated Back Surface) VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V (TAB) VGEM Transient ±30 V G C E IC25 TC = 25

5.6. ixgr35n120b.pdf Size:47K _igbt_a

IXGR39N60B
IXGR39N60B

 VCES IC25 VCE(sat) tfi(typ) HiPerFASTTM IGBT IXGR 35N120B 1200 V 70 A 3.3 V 160 ns ISOPLUS247TM 1200 V 70 A 4.0 V 115 ns IXGR 35N120C (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V G VGEM Transient ±30 V C E Isolated Backside* IC25

5.7. ixgr32n170h1.pdf Size:82K _igbt_a

IXGR39N60B
IXGR39N60B

IXGR 32N170H1 VCES = 1700 V High Voltage IC25 = 38 A IGBT with Diode VCE(sat) = 3.5 V Electrically Isolated Tab tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V G VGEM Transient ±30 V C ISOLATED TAB E IC25 TC = 25°C3

5.8. ixgr35n120c.pdf Size:47K _igbt_a

IXGR39N60B
IXGR39N60B

 VCES IC25 VCE(sat) tfi(typ) HiPerFASTTM IGBT IXGR 35N120B 1200 V 70 A 3.3 V 160 ns ISOPLUS247TM 1200 V 70 A 4.0 V 115 ns IXGR 35N120C (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V G VGEM Transient ±30 V C E Isolated Backside* IC25

5.9. ixgr32n170ah1.pdf Size:519K _igbt_a

IXGR39N60B
IXGR39N60B

Advance Technical Information IXGR 32N170AH1 VCES = 1700 V High Voltage IC25 = 26 A IGBT with Diode VCE(sat) = 5.2 V Electrically Isolated Tab tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V G VGEM Transient ±30 V C ISOLATED TAB E IC25 TC

5.10. ixgr32n60cd1.pdf Size:569K _igbt_a

IXGR39N60B
IXGR39N60B

VCES = 600 V HiPerFASTTM IGBT IXGR 32N60CD1 IC25 = 45 A with Diode VCE(SAT) = 2.7 V ISOPLUS247TM tfi(typ) = 55 ns (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C IC25 TC = 25°

5.11. ixgr32n60c.pdf Size:536K _igbt_a

IXGR39N60B
IXGR39N60B

IXGR 32N60C VCE = 600 V HiPerFASTTM IGBT IC25 = 45 A Lightspeed Series VCE(sat) = 2.7 V ISOPLUS247TM package tfi typ = 55 ns (Electrically Isolated Back Side) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G C Isolated Backside* VGEM Transie

See also transistors datasheet: IXGR24N120C3D1 , IXGR24N60C , IXGR32N170AH1 , IXGR32N170H1 , IXGR32N90B2D1 , IXGR35N120B , IXGR35N120BD1 , IXGR35N120C , IRGP50B60PD1 , IXGR39N60BD1 , IXGR40N60B , IXGR40N60B2 , IXGR40N60B2D1 , IXGR40N60C , IXGR40N60C2 , IXGR40N60C2D1 , IXGR40N60CD1 .

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