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G12N50E1D IGBT (IC) Datasheet. Cross Reference Search. G12N50E1D Equivalent

Type Designator: G12N50E1D

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 75W

Maximum collector-emitter voltage |Uce|, V: 500V

Collector-emitter saturation voltage |Ucesat|, V: 4.5V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 12A

Maximum junction temperature (Tj), °C: 175

Rise time, nS: 50

Maximum collector capacity (Cc), pF:

Package: TO218

G12N50E1D Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: G10N50E1 , G12N40C1 , G12N40C1D , G12N40E1 , G12N40E1D , G12N50C1 , G12N50C1D , G12N50E1 , GT15N101 , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D , G34N100E2 .

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IGBT: IRGP6660D | IRGP4660D | IRGP4063D1 | NGTB40N120IHLWG | NGTB40N120IHL | NGTB30N120IHLWG | NGTB30N120IHL | STGWA25M120DF3 | STGW25M120DF3 | IRGP4760D |

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