All IGBT Datasheet

 

IXGR50N160H1 IGBT (IC) Datasheet. Cross Reference Search. IXGR50N160H1 Equivalent

Type Designator: IXGR50N160H1

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1600V

Collector-emitter saturation voltage |Ucesat|, V: 2.3V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 75A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: ISOPLUS247

IXGR50N160H1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGR50N160H1 PDF doc:

1.1. ixgr50n160h1.pdf Size:94K _ixys

IXGR50N160H1
IXGR50N160H1

Advance Technical Information High Voltage IGBT VCES = 1600V IXGR50N160H1 with Diode IC110 = 36A ? VCE(sat) ? 2.30V ? ? ? ( Electrically Isolated Tab) ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1600 V VCGR TJ = 25C to 150C, RGE = 1M? 1600 V G VGES Continuous 20 V C E Isolated Tab VGEM Transient 30 V IC25 TC = 25C, Lead RMS limit 75 A G =

1.2. ixgr50n160h1.pdf Size:92K _igbt_a

IXGR50N160H1
IXGR50N160H1

Advance Technical Information High Voltage IGBT VCES = 1600V IXGR50N160H1 with Diode IC110 = 36A ≤ VCE(sat) ≤ 2.30V ≤ ≤ ≤ ( Electrically Isolated Tab) ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1600 V G VGES Continuous ±20 V C E Isolated Tab VGEM Transient ±30 V IC25 TC = 25°C, Lead

3.1. ixgr50n60a2u1.pdf Size:144K _ixys

IXGR50N160H1
IXGR50N160H1

Advance Technical Information IXGR 50N60A2U1 VCES = 600 V IGBT with Diode IC25 = 75 A Low Saturation Voltage IGBT with VCE(sat) = 1.7 V Low Forward Drop Diode Electrically Isolated Mounting Tab Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247(IXGR) E153432 VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V VGEM Trans

3.2. ixgr50n60c2.pdf Size:607K _ixys

IXGR50N160H1
IXGR50N160H1

IXGR 50N60C2 VCES = 600 V HiPerFASTTM IXGR 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25C to 150C 600 V (IXGR) VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V (ISOLATED TAB) VGEM Transient 30 V IC25 TC = 25C75 A G = Gate C =

3.3. ixgr50n60b2.pdf Size:611K _ixys

IXGR50N160H1
IXGR50N160H1

IXGR 50N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 50N60B2D1 IC25 = 68 A ISOPLUS247TM VCE(sat) = 2.2 V B2-Class High Speed IGBTs tfi(typ) = 65 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25C to 150C 600 V (IXGR) VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G (ISOLATED TAB) VGES Continuous

3.4. ixgr50n60a2u1.pdf Size:140K _igbt_a

IXGR50N160H1
IXGR50N160H1

Advance Technical Information IXGR 50N60A2U1 VCES = 600 V IGBT with Diode IC25 = 75 A Low Saturation Voltage IGBT with VCE(sat) = 1.7 V Low Forward Drop Diode Electrically Isolated Mounting Tab Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247(IXGR) E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V

3.5. ixgr50n60b.pdf Size:563K _igbt_a

IXGR50N160H1
IXGR50N160H1

VCES = 600 V IXGR 50N60B HiPerFASTTM IGBT IC25 = 75 A IXGR 50N60BD1 ISOPLUS247TM VCE(sat) = 2.5 V (Electrically Isolated Back Surface) tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Backside* IC25 TC = 25

3.6. ixgr50n90b2d1.pdf Size:215K _igbt_a

IXGR50N160H1
IXGR50N160H1

IXGR 50N90B2D1 VCES = 900 V HiPerFASTTM IC25 = 40 A IXGR 50N90B2D1 IGBT with Fast VCE(sat) = 2.9 V Diode tfi typ = 200 ns B2-Class High Speed IGBT with Fast Diode (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ± 20 V VGEM Transient

3.7. ixgr50n60bd1.pdf Size:563K _igbt_a

IXGR50N160H1
IXGR50N160H1

VCES = 600 V IXGR 50N60B HiPerFASTTM IGBT IC25 = 75 A IXGR 50N60BD1 ISOPLUS247TM VCE(sat) = 2.5 V (Electrically Isolated Back Surface) tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Backside* IC25 TC = 25

3.8. ixgr50n60c2.pdf Size:506K _igbt_a

IXGR50N160H1
IXGR50N160H1

IXGR 50N60C2 VCES = 600 V HiPerFASTTM IXGR 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25°C to 150°C 600 V (IXGR) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V (ISOLATED TAB) VGEM Transient ±30 V IC25 TC = 25°C75 A

3.9. ixgr50n60b2d1.pdf Size:514K _igbt_a

IXGR50N160H1
IXGR50N160H1

IXGR 50N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 50N60B2D1 IC25 = 68 A ISOPLUS247TM VCE(sat) = 2.2 V B2-Class High Speed IGBTs tfi(typ) = 65 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25°C to 150°C 600 V (IXGR) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G (ISOLATED TAB) VGES C

3.10. ixgr50n60c2d1.pdf Size:506K _igbt_a

IXGR50N160H1
IXGR50N160H1

IXGR 50N60C2 VCES = 600 V HiPerFASTTM IXGR 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25°C to 150°C 600 V (IXGR) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V (ISOLATED TAB) VGEM Transient ±30 V IC25 TC = 25°C75 A

3.11. ixgr50n60b2.pdf Size:514K _igbt_a

IXGR50N160H1
IXGR50N160H1

IXGR 50N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 50N60B2D1 IC25 = 68 A ISOPLUS247TM VCE(sat) = 2.2 V B2-Class High Speed IGBTs tfi(typ) = 65 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25°C to 150°C 600 V (IXGR) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G (ISOLATED TAB) VGES C

See also transistors datasheet: IXGR40N60B2D1 , IXGR40N60C , IXGR40N60C2 , IXGR40N60C2D1 , IXGR40N60CD1 , IXGR48N60B3 , IXGR48N60B3D1 , IXGR48N60C3D1 , GT60M101 , IXGR50N60A2U1 , IXGR50N60B , IXGR50N60B2 , IXGR50N60B2D1 , IXGR50N60BD1 , IXGR50N60C2 , IXGR50N60C2D1 , IXGR50N90B2D1 .

Search Terms:

 IXGR50N160H1 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


IXGR50N160H1
  IXGR50N160H1
  IXGR50N160H1
  IXGR50N160H1
 
IXGR50N160H1
  IXGR50N160H1
  IXGR50N160H1
  IXGR50N160H1
 

social 

LIST

Last Update

IGBT: STGWT60V60DF | STGWT60H65FB | STGWT60H65DFB | STGWT60H60DLFB | STGWT28IH125DF | STGWA60H65DFB | STGWA25S120DF3 | STGWA25H120F2 | STGWA25H120DF2 | STGW60V60F |

Enter a full or partial SMD code with a minimum of 2 letters or numbers