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IXGR50N60B IGBT (IC) Datasheet. Cross Reference Search. IXGR50N60B Equivalent

Type Designator: IXGR50N60B

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.5V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 75A

Maximum junction temperature (Tj), °C:

Rise time, nS: 85

Maximum collector capacity (Cc), pF:

Package: ISOPLUS247

IXGR50N60B Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGR50N60B PDF doc:

1.1. ixgr50n60a2u1.pdf Size:144K _ixys

IXGR50N60B
IXGR50N60B

Advance Technical Information IXGR 50N60A2U1 VCES = 600 V IGBT with Diode IC25 = 75 A Low Saturation Voltage IGBT with VCE(sat) = 1.7 V Low Forward Drop Diode Electrically Isolated Mounting Tab Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247(IXGR) E153432 VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V VGEM Trans

1.2. ixgr50n60c2.pdf Size:607K _ixys

IXGR50N60B
IXGR50N60B

IXGR 50N60C2 VCES = 600 V HiPerFASTTM IXGR 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25C to 150C 600 V (IXGR) VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V (ISOLATED TAB) VGEM Transient 30 V IC25 TC = 25C75 A G = Gate C =

1.3. ixgr50n60b2.pdf Size:611K _ixys

IXGR50N60B
IXGR50N60B

IXGR 50N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 50N60B2D1 IC25 = 68 A ISOPLUS247TM VCE(sat) = 2.2 V B2-Class High Speed IGBTs tfi(typ) = 65 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25C to 150C 600 V (IXGR) VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G (ISOLATED TAB) VGES Continuous

1.4. ixgr50n60a2u1.pdf Size:140K _igbt_a

IXGR50N60B
IXGR50N60B

Advance Technical Information IXGR 50N60A2U1 VCES = 600 V IGBT with Diode IC25 = 75 A Low Saturation Voltage IGBT with VCE(sat) = 1.7 V Low Forward Drop Diode Electrically Isolated Mounting Tab Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247(IXGR) E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V

1.5. ixgr50n60b.pdf Size:563K _igbt_a

IXGR50N60B
IXGR50N60B

VCES = 600 V IXGR 50N60B HiPerFASTTM IGBT IC25 = 75 A IXGR 50N60BD1 ISOPLUS247TM VCE(sat) = 2.5 V (Electrically Isolated Back Surface) tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Backside* IC25 TC = 25

1.6. ixgr50n60bd1.pdf Size:563K _igbt_a

IXGR50N60B
IXGR50N60B

VCES = 600 V IXGR 50N60B HiPerFASTTM IGBT IC25 = 75 A IXGR 50N60BD1 ISOPLUS247TM VCE(sat) = 2.5 V (Electrically Isolated Back Surface) tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Backside* IC25 TC = 25

1.7. ixgr50n60c2.pdf Size:506K _igbt_a

IXGR50N60B
IXGR50N60B

IXGR 50N60C2 VCES = 600 V HiPerFASTTM IXGR 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25°C to 150°C 600 V (IXGR) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V (ISOLATED TAB) VGEM Transient ±30 V IC25 TC = 25°C75 A

1.8. ixgr50n60b2d1.pdf Size:514K _igbt_a

IXGR50N60B
IXGR50N60B

IXGR 50N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 50N60B2D1 IC25 = 68 A ISOPLUS247TM VCE(sat) = 2.2 V B2-Class High Speed IGBTs tfi(typ) = 65 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25°C to 150°C 600 V (IXGR) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G (ISOLATED TAB) VGES C

1.9. ixgr50n60c2d1.pdf Size:506K _igbt_a

IXGR50N60B
IXGR50N60B

IXGR 50N60C2 VCES = 600 V HiPerFASTTM IXGR 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25°C to 150°C 600 V (IXGR) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V (ISOLATED TAB) VGEM Transient ±30 V IC25 TC = 25°C75 A

1.10. ixgr50n60b2.pdf Size:514K _igbt_a

IXGR50N60B
IXGR50N60B

IXGR 50N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 50N60B2D1 IC25 = 68 A ISOPLUS247TM VCE(sat) = 2.2 V B2-Class High Speed IGBTs tfi(typ) = 65 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25°C to 150°C 600 V (IXGR) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G (ISOLATED TAB) VGES C

See also transistors datasheet: IXGR40N60C2 , IXGR40N60C2D1 , IXGR40N60CD1 , IXGR48N60B3 , IXGR48N60B3D1 , IXGR48N60C3D1 , IXGR50N160H1 , IXGR50N60A2U1 , STGW20NC60VD , IXGR50N60B2 , IXGR50N60B2D1 , IXGR50N60BD1 , IXGR50N60C2 , IXGR50N60C2D1 , IXGR50N90B2D1 , IXGR55N120A3H1 , IXGR60N60B2 .

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