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G12N60D1 IGBT (IC) Datasheet. Cross Reference Search. G12N60D1 Equivalent

Type Designator: G12N60D1

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 75W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.9V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 21A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 100

Maximum collector capacity (Cc), pF:

Package: TO220

G12N60D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

G12N60D1 PDF doc:

1.1. hgtg12n60d1d.pdf Size:46K _harris_semi

G12N60D1
G12N60D1

S E M I C O N D U C T O R HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 12A, 600V Latch Free Operation EMITTER COLLECTOR Typical Fall Time <500ns GATE Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) With Anti-Parallel Diode tRR < 60ns Description The IGBT is a MOS gated high voltage switching

4.1. hgtg12n60a4d_hgtp12n60a4d_hgt1s12n60a4d.pdf Size:173K _fairchild_semi

G12N60D1
G12N60D1

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching 600V Swit

4.2. hgtg12n60a4_hgtp12n60a4_hgt1s12n60a4.pdf Size:207K _fairchild_semi

G12N60D1
G12N60D1

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices have the hi

4.3. hgtg12n60c3d.pdf Size:120K _fairchild_semi

G12N60D1
G12N60D1

HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 24A, 600V at TC = 25oC The HGTG12N60C3D is a MOS gated high voltage switching Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oC device combining the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device has the high i

4.4. hgtg12n60c3d.pdf Size:106K _harris_semi

G12N60D1
G12N60D1

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features Package 24A, 600V at TC = +25oC JEDEC STYLE TO-247 Typical Fall Time - 210ns at TJ = +150oC E C Short Circuit Rating G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high voltage switching device

4.5. hgtg12n60c3d_.pdf Size:102K _harris_semi

G12N60D1
G12N60D1

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package 24A, 600V at TC = 25oC JEDEC STYLE TO-247 Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC E C Short Circuit Rating G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high

See also transistors datasheet: G12N40C1D , G12N40E1 , G12N40E1D , G12N50C1 , G12N50C1D , G12N50E1 , G12N50E1D , G12N60C3D , 10N40C1D , G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D .

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