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G20N120E2 IGBT (IC) Datasheet. Cross Reference Search. G20N120E2 Equivalent

Type Designator: G20N120E2

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 150W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 2.9V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 34A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 100

Maximum collector capacity (Cc), pF:

Package: TO247

G20N120E2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

G20N120E2 PDF doc:

3.1. hgtg20n120.pdf Size:79K _harris_semi

G20N120E2
G20N120E2

S E M I C O N D U C T O R HGTG20N120E2 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1200V • Latch Free Operation EMITTER • Typical Fall Time - 780ns COLLECTOR GATE • High Input Impedance COLLECTOR • Low Conduction Loss (BOTTOM SIDE METAL) Description The HGTG20N120E2 is a MOS gated, high voltage switch- ing device combining the best features of M

3.2. brg20n120d.pdf Size:161K _blue-rocket-elect

G20N120E2
G20N120E2

BRG20N120D 绝缘栅双极晶体管/INSULATED-GATE BIPOLAR TRANSISTOR 用途/Applications ◆ 逆变器/General purpose inverter ◆ 变频器/Frequency converters ◆ 电磁炉/Induction Heating(IH) ◆ 不间断电源/Uninterrupted Power Supply(UPS) 特点/Features ◆ 低栅极电荷/Low gate charge ◆ 正温度系数/Positive temperature coefficient ◆ 低饱和压降/Lo

5.1. hgtg20n1.pdf Size:47K _harris_semi

G20N120E2
G20N120E2

S E M I C O N D U C T O R HGTG20N100D2 20A, 1000V N-Channel IGBT May 1995 Features Package JEDEC STYLE TO-247 • 34A, 1000V EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time 520ns GATE • High Input Impedance • Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) Description The HGTG20N100D2 is a MOS gated high voltage switching device combining the best features of MOSFETs

5.2. ssig20n135h.pdf Size:614K _silikron

G20N120E2
G20N120E2

 SSIG20N135H Main Product Characteristics: VCES 1350V VCE(sat) 1.9V (typ.) ID 20A @ TC = 100° C Schema t ic d iagr am TO-247 Features and Benefits:  Advanced Trench-FS Process Technology  Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A  Fast Switching  High Input Impedance  Pb- Free Product  Power Switch Circuit of Induction Co

See also transistors datasheet: G12N40E1 , G12N40E1D , G12N50C1 , G12N50C1D , G12N50E1 , G12N50E1D , G12N60C3D , G12N60D1 , STGB10NB37LZ , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 .

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IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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