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IXGT15N120B2D1 IGBT (IC) Datasheet. Cross Reference Search. IXGT15N120B2D1 Equivalent

Type Designator: IXGT15N120B2D1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W:

Maximum Collector-Emitter Voltage |Vce|, V: 1200V

Collector-Emitter saturation Voltage |Vcesat|, V: 3.3V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 30A

Maximum Junction Temperature (Tj), °C:

Rise Time, nS: 137

Maximum Collector Capacity (Cc), pF:

Package: TO268

IXGT15N120B2D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGT15N120B2D1 PDF doc:

1.1. ixgh15n120b_ixgt15n120b.pdf Size:529K _ixys

IXGT15N120B2D1
IXGT15N120B2D1

IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C30 A TO-247 AD (IXGH) IC110 TC = 110C15 A ICM TC = 25C, 1 ms 60 A SSOA VGE = 15

1.2. ixgt15n120cd1.pdf Size:60K _igbt_a

IXGT15N120B2D1
IXGT15N120B2D1

Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V G VGES Continuous ±20 V C E TAB VGEM Transient ±30 V IC25 TC = 25°C30 A TO-2

1.3. ixgt15n120c.pdf Size:52K _igbt_a

IXGT15N120B2D1
IXGT15N120B2D1

IXGH 15N120C VCES = 1200 V IGBT IXGT 15N120C IC25 = 30 A VCE(sat) = 3.8 V Lightspeed Series tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V G VGES Continuous ±20 V E VGEM Transient ±30 V (TAB) IC25 TC = 25°C30 A IC90 TC = 90°C15 A TO-247 AD (IXGH) ICM TC =

1.4. ixgt15n120bd1.pdf Size:60K _igbt_a

IXGT15N120B2D1
IXGT15N120B2D1

Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V G VGES Continuous ±20 V C E TAB VGEM Transient ±30 V IC25 TC = 25°C30 A TO-2

1.5. ixgt15n120b.pdf Size:170K _igbt_a

IXGT15N120B2D1
IXGT15N120B2D1

IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C30 A TO-247 AD (IXGH) IC110 TC = 110°C15 A ICM TC = 25°C, 1 ms 60 A

1.6. ixgt15n120b2d1.pdf Size:66K _igbt_a

IXGT15N120B2D1
IXGT15N120B2D1

Advance Technical Information VCES =1200 V IXGH15N120B2D1 HiPerFASTTM IGBT IC25 = 30 A IXGT15N120B2D1 VCE(sat) = 3.3 V Optimized for 10-20 KHz hard tfi(typ) = 137 ns switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1200 V (IXGH) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V G TAB C

See also transistors datasheet: IXGR6N170A , IXGR72N60A3 , IXGR72N60A3H1 , IXGR72N60B3D1 , IXGR72N60B3H1 , IXGR72N60C3D1 , IXGT10N170 , IXGT10N170A , FGH40N60SFD , IXGT16N170 , IXGT16N170A , IXGT16N170AH1 , IXGT20N120 , IXGT20N120B , IXGT20N140C3H1 , IXGT22N170 , IXGT24N170 .

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