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IXGT15N120B2D1 IGBT (IC) Datasheet. Cross Reference Search. IXGT15N120B2D1 Equivalent

Type Designator: IXGT15N120B2D1

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 3.3V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 30A

Maximum junction temperature (Tj), °C:

Rise time, nS: 137

Maximum collector capacity (Cc), pF:

Package: TO268

IXGT15N120B2D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGT15N120B2D1 PDF doc:

1.1. ixgh15n120b_ixgt15n120b.pdf Size:529K _ixys

IXGT15N120B2D1
IXGT15N120B2D1

IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C30 A TO-247 AD (IXGH) IC110 TC = 110C15 A ICM TC = 25C, 1 ms 60 A SSOA VGE = 15

5.1. ixgh10n170a_ixgt10n170a.pdf Size:565K _ixys

IXGT15N120B2D1
IXGT15N120B2D1

IXGH 10N170A VCES = 1700 V High Voltage IXGT 10N170A IC25 = 10 A IGBT VCE(sat) = 6.0 V tfi(typ) = 35 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C; RGE = 1 M? 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C10 A TO-247 AD (IXGH) IC90 TC = 90C5 A ICM TC = 25C, 1

See also transistors datasheet: IXGR6N170A , IXGR72N60A3 , IXGR72N60A3H1 , IXGR72N60B3D1 , IXGR72N60B3H1 , IXGR72N60C3D1 , IXGT10N170 , IXGT10N170A , FGH40N60SFD , IXGT16N170 , IXGT16N170A , IXGT16N170AH1 , IXGT20N120 , IXGT20N120B , IXGT20N140C3H1 , IXGT22N170 , IXGT24N170 .

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IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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