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IXGT24N170A IGBT (IC) Datasheet. Cross Reference Search. IXGT24N170A Equivalent

Type Designator: IXGT24N170A

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1700V

Collector-emitter saturation voltage |Ucesat|, V: 6V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 24A

Maximum junction temperature (Tj), °C:

Rise time, nS: 40

Maximum collector capacity (Cc), pF:

Package: TO268

IXGT24N170A Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGT24N170A PDF doc:

1.1. ixgh24n170a_ixgt24n170a.pdf Size:519K _ixys

IXGT24N170A
IXGT24N170A

IXGH 24N170A VCES = 1700 V High Voltage IXGT 24N170A IC25 = 24 A IGBT VCE(sat) = 6.0 V tfi(typ) = 45 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C; RGE = 1 M? 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C24 A TO-247 AD (IXGH) IC90 TC = 90C16 A ICM TC = 25C, 1

1.2. ixgt24n170ah1.pdf Size:223K _igbt_a

IXGT24N170A
IXGT24N170A

Preliminary Technical Information High Voltage VCES = 1700V IXGH24N170AH1 IGBTs w/Diode IXGT24N170AH1 IC25 = 24A ≤ VCE(sat) ≤ ≤ 6.0V ≤ ≤ tfi(typ) = 40ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V G C (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V C E VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 24 A

1.3. ixgt24n170a.pdf Size:222K _igbt_a

IXGT24N170A
IXGT24N170A

Preliminary Technical Information High Voltage VCES = 1700V IXGH24N170A IGBTs IXGT24N170A IC25 = 24A ≤ VCE(sat) ≤ ≤ 6.0V ≤ ≤ tfi(typ) = 40ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V G C (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V C E VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 24 A TO-268 (IX

1.4. ixgt24n170.pdf Size:113K _igbt_a

IXGT24N170A
IXGT24N170A

Advance Technical Information VCES = 1700V High Voltage IXGH24N170 IC25 = 50A IGBT IXGT24N170 ≤ VCE(sat) ≤ ≤ 3.3V ≤ ≤ tfi(typ) = 250ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V G C C (TAB) VGES Continuous ± 20 V E VGEM Transient ± 30 V TO-268 (IXGT) IC25 TC = 25°C 50 A IC9

See also transistors datasheet: IXGT16N170 , IXGT16N170A , IXGT16N170AH1 , IXGT20N120 , IXGT20N120B , IXGT20N140C3H1 , IXGT22N170 , IXGT24N170 , RJH60F7ADPK , IXGT24N170AH1 , IXGT25N160 , IXGT25N250 , IXGT28N120B , IXGT28N120BD1 , IXGT28N60BD1 , IXGT2N250 , IXGT30N120B3D1 .

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