IXGT2N250 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IXGT2N250

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 2500V

Collector-emitter saturation voltage |Ucesat|, V: 3.1V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 5.5A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: TO268

Equivalent transistors for IXGT2N250

IXGT2N250 PDF document for downloads:

5.1. ixgh28n120b_ixgt28n120b.pdf Size:575K _ixys

IXGH 28N120B VCES = 1200 V High Voltage IGBT IXGT 28N120B IC25 = 50 A VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 1200 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C50 A TO-247 AD (IXGH) IC110 TC = 110°C28 A ICM TC = 25°C, 1 ms 150 A SSOA VGE = 15 V, TVJ = 125°C, RG = 5 ? ICM = 120 A (RBSOA) Clamped inductive load @ 0.8 VCES C (TAB) G C PC TC = 25°C 250 W E TJ -55 ... +150 °C G = Gate, C = Collector, TJM 150 °C E = Emitter, TAB = Collector Tstg -55 ... +150 °C Maximum Lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 260 °C Features High Voltage IGBT for resonant Md Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. power supplies - Induction heating Weight TO-247 AD 6 g - Rice cookers TO-268 4 g International standard package

5.2. ixgh24n170a_ixgt24n170a.pdf Size:519K _ixys

IXGH 24N170A VCES = 1700 V High Voltage IXGT 24N170A IC25 = 24 A IGBT VCE(sat) = 6.0 V tfi(typ) = 45 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 1700 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C24 A TO-247 AD (IXGH) IC90 TC = 90°C16 A ICM TC = 25°C, 1 ms 75 A SSOA VGE = 15 V, TVJ = 125°C, RG = 5? ICM = 50 A C (TAB) (RBSOA) Clamped inductive load @ 0.8 VCES G C E tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22? 10 µs G = Gate, C = Collector, E = Emitter, TAB = Collector PC TC = 25°C 250 W TJ -55 ... +150 °C Features TJM 150 °C International standard packages Tstg -55 ... +150 °C JEDEC TO-268 and JEDEC TO-247 AD Md Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. High current handling capability MOS Gate turn-on Maximum lead temperature for soldering 300 °C - drive simplicity 1.6 mm (0.062 in.) from case for 1

5.3. ixgh20n100_ixgt20n100.pdf Size:53K _ixys

IXGH 20N100 VCES = 1000 V IGBT IXGT 20N100 IC25 = 40 A VCE(sat) = 3.0 V tfi(typ) = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1000 V G VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V E VGES Continuous ±20 V (TAB) VGEM Transient ±30 V TO-247 AD (IXGH) IC25 TC = 25°C40 A IC90 TC = 90°C20 A ICM TC = 25°C, 1 ms 80 A SSOA VGE= 15 V, TVJ = 125°C, RG = 47 W ICM = 40 A (RBSOA) Clamped inductive load, L = 100 mH @ 0.8 VCES G C E C (TAB) PC TC = 25°C 150 W TJ -55 ... +150 °C G = Gate, C = Collector, E = Emitter, TAB = Collector TJM 150 °C Tstg -55 ... +150 °C Maximum Lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s Features Maximum Tab temperature for soldering SMD devices for 10 s 260 °C • International standard packages JEDEC TO-268 surface and Md Mounting torque (M3) 1.13/10 Nm/lb.in. JEDEC TO-247 AD Weight TO-247 AD 6 g • High current handling capability TO-268 4 g • MOS Gat

5.4. ixgh25n160_ixgt25n160.pdf Size:142K _ixys

VCES = 1600 V IXGH 25N160 High Voltage IGBT IC25 = 75 A IXGT 25N160 VCE(sat)= 2.5 V For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 1600 V VGES Continuous ± 20 V G C C (TAB) VGEM Transient ± 30 V E IC25 TC = 25°C 75 A TO-268 (IXGT) IC110 TC = 110°C 25 A ICM TC = 25°C, VGE = 20 V, 1 ms 200 A G SSOA VGE= 15 V, TVJ = 125°C, RG = 20 ? ICM = 100 A E (RBSOA) Clamped inductive load @ 0.8 VCES C (TAB) PC TC = 25°C 300 W G = Gate, C = Collector, TJ -55 ... +150 °C E = Emitter, TAB = Collector TJM 150 °C Features Tstg -55 ... +150 °C High peak current capability Maximum Lead temperature for soldering 300 °C Low saturation voltage 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 260 °C MOS Gate turn-on -drive simplicity Md Mounting torque (TO-247) 1.13/10 Nm/lb-in R

5.5. ixgh20n120b_ixgt20n120b.pdf Size:568K _ixys

IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 1200 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C40 A TO-247 AD (IXGH) IC110 TC = 110°C20 A ICM TC = 25°C, 1 ms 80 A SSOA VGE = 15 V, TVJ = 125°C, RG = 10 ? ICM = 80 A (RBSOA) Clamped inductive load @ 0.8 VCES C (TAB) G C PC TC = 25°C 190 W E TJ -55 ... +150 °C G = Gate, C = Collector, TJM 150 °C E = Emitter, TAB = Collector Tstg -55 ... +150 °C Maximum Lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 260 °C Features High Voltage IGBT for resonant Md Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. power supplies - Induction heating Weight TO-247 AD 6 g - Rice cookers TO-268 4 g Internatio

5.6. ixgh20n120_ixgt20n120.pdf Size:106K _ixys

VCES = 1200 V IXGH 20N120 IGBT IC25 = 40 A IXGT 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G D S IC25 TC = 25°C40 A IC90 TC = 90°C20 A TO-268 (IXGT) ICM TC = 25°C, 1 ms 80 A SSOA VGE = 15 V, TVJ = 125°C, RG = 47 ? ICM = 40 A (RBSOA) Clamped inductive load @ 0.8 VCES G E C (TAB) PC TC = 25°C 150 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Features Maximum lead temperature for soldering 300 °C •International standard packages 1.6 mm (0.062 in.) from case for 10 s JEDEC TO-247 and TO-268 Maximum tab temperature for soldering 260 °C •High current handling capability Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. •MOS Gate turn-on - drive simplicity Weight TO-247 6 g TO-268 5 g Applications •AC motor speed control •DC servo and robot drives Symbol Tes

See also transistors datasheet: IXGT24N170 , IXGT24N170A , IXGT24N170AH1 , IXGT25N160 , IXGT25N250 , IXGT28N120B , IXGT28N120BD1 , IXGT28N60BD1 , G12N60C3D , IXGT30N120B3D1 , IXGT30N60B , IXGT30N60B2 , IXGT30N60B2D1 , IXGT30N60C2 , IXGT30N60C2D1 , IXGT30N60C3D1 , IXGT32N100A3 .

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