IGBT Datasheet



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G20N60B3D
  G20N60B3D
  G20N60B3D
  G20N60B3D
 
G20N60B3D
  G20N60B3D
  G20N60B3D
  G20N60B3D
 
 
List
10N40C1D ..APT15GP90BDF1
APT15GP90K ..APT60GT60BR
APT60GT60BR ..APTGF90TA60P
APTGF90TDU60P ..AUIRGR4045D
AUIRGS14C40L ..G10N50E1
G12N40C1 ..GT50J101
GT50J102 ..HGTD10N50F1
HGTD10N50F1S ..HGTP20N60C3
HGTP20N60C3R ..IKP04N60T
IKP06N60T ..IRG4PC40UD
IRG4PC40W ..IRGI4086
IRGI4090 ..IXBT24N170
IXBT28N170A ..IXGH10N100
IXGH10N100A ..IXGH32N60C
IXGH32N60CD1 ..IXGK72N60A3H1
IXGK72N60B3H1 ..IXGR40N60B2
IXGR40N60B2D1 ..IXGT60N60C2
IXGT60N60C3D1 ..IXSK50N60BU1
IXSK80N60B ..MGB15N40CL
MGD623N ..MIXA30W1200TMH
MIXA30W1200TML ..MWI35-12A7
MWI35-12T7T ..RJH60M2DPE
RJH60M2DPP-M0 ..SGP40N60UF
SGP5N60RUF ..SKM300GAL123D
SKM300GAR063D ..SME6G15US120
SME6G15US60 ..STGP35N35LZ
STGP3NC120HD ..VWI35-06P1
 
G20N60B3D All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

G20N60B3D IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: G20N60B3D

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 165W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 40A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 25

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for G20N60B3D - Cross-Reference Search

G20N60B3D PDF doc:

1.1. hgtg20n60b3d.pdf Size:176K _fairchild_semi

G20N60B3D
G20N60B3D
HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode • 40A, 600V at TC = 25oC The HGTG20N60B3D is a MOS gated high voltage • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC switching device combining the best features of MOSFETs • Short Circuit Rated and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction • Low Conduction Loss loss of a bipolar transistor. The much lower on-state voltage • Hyperfast Anti-Parallel Diode drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. Packaging The IGBT is ideal for many high voltage switching JEDEC STYLE TO-247 applications operating at moderate frequencies where low E conduction losses are essential. C G Formerly developmental type TA49016. Ordering Information PART NUMBER PACKAGE BRAND HGTG20N60B3D TO-247 G20N6

2.1. hgtg20n60b3.pdf Size:236K _fairchild_semi

G20N60B3D
G20N60B3D
HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high • 40A, 600V at TC = 25oC voltage switching devices combining the best features of • 600V Switching SOA Capability MOSFETs and bipolar transistors. These devices have the • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on- • Short Circuit Rated state voltage drop varies only moderately between 25oC and • Low Conduction Loss 150oC. • Related Literature The IGBT is ideal for many high voltage switching - TB334 “Guidelines for Soldering Surface Mount applications operating at moderate frequencies where low Components to PC Boards” conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays Packaging and contactors. JEDEC STYLE TO-247

4.1. hgtg20n60a4_hgtp20n60a4.pdf Size:136K _fairchild_semi

G20N60B3D
G20N60B3D
HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated • >100kHz Operation at 390V, 20A high voltage switching devices combining the best features • 200kHz Operation at 390V, 12A of MOSFETs and bipolar transistors. These devices have the • 600V Switching SOA Capability high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower • Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125oC on-state voltage drop varies only moderately between 25oC • Low Conduction Loss and 150oC. • Temperature Compensating SABER™ Model This IGBT is ideal for many high voltage switching www.intersil.com applications operating at high frequencies where low conduction losses are essential. This device has been • Related Literature optimized for high frequency switch mode power - TB334 “Guidelines for Soldering Surface Mount supplies.

4.2. hgtg20n60a4d.pdf Size:148K _fairchild_semi

G20N60B3D
G20N60B3D
HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode • >100kHz Operation At 390V, 20A The HGTG20N60A4D is a MOS gated high voltage switching • 200kHz Operation At 390V, 12A device combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar • Typical Fall Time . . . . . . . . . . . . . . . . 55ns at TJ = 125oC transistor. The much lower on-state voltage drop varies only • Low Conduction Loss moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel • Temperature Compensating SABER™ Model is the development type TA49372. www.fairchildsemi.com This IGBT is ideal for many high voltage switching Packaging applications operating at high frequencies where low JEDEC STYLE TO-247 conduction losses are essential.

4.3. hgt1s20n60c3s_hgtp20n60c3_hgtg20n60c3.pdf Size:140K _fairchild_semi

G20N60B3D
G20N60B3D
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices • 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. These devices have the high input impedance of • Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only • Short Circuit Rating moderately between 25oC and 150oC. • Low Conduction Loss The IGBT is ideal for many high voltage switching • Related Literature applications operating at moderate frequencies where low - TB334 “Guidelines for Soldering Surface Mount conduction losses are essential, such as: AC and DC motor Components to PC Boards” controls, power supplies and drivers for solenoids, relays and contactors. Packaging Formerly developme

See also transistors datasheet: G12N50C1 , G12N50C1D , G12N50E1 , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , FII50-12E , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D .

Keywords

 G20N60B3D Datasheet  G20N60B3D Datenblatt  G20N60B3D RoHS  G20N60B3D Distributor
 G20N60B3D Application Notes  G20N60B3D Component  G20N60B3D Circuit  G20N60B3D Schematic
 G20N60B3D Equivalent  G20N60B3D Cross Reference  G20N60B3D Data Sheet  G20N60B3D Fiche Technique

 

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