IGBT Datasheet


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G20N60B3D
  G20N60B3D
  G20N60B3D
 
G20N60B3D
  G20N60B3D
  G20N60B3D
 
G20N60B3D
  G20N60B3D
 
 
List
10N40C1D ..APT50GF120LR
APT50GF60AR ..FGPF4533
FGPF4536 ..GT5G101
GT5G102 ..HGTD7N60B3S
HGTD7N60C3 ..HGTP7N60A4D
HGTP7N60B3 ..IKW25T120
IKW30N100T ..IRG4PH30K
IRG4PH30KD ..IRGP4066D
IRGP4066D-E ..IXDH35N60BD1
IXDN50N120AU1 ..IXGH15N120B2D1
IXGH15N120BD1 ..IXGH40N120B2D1
IXGH40N120C3 ..IXGN200N60B
IXGN200N60B3 ..IXGR55N120A3H1
IXGR60N60B2 ..IXGX320N60B3
IXGX32N170AH1 ..IXSP20N60B2D1
IXSP24N60B ..MGP7N60ED
MGS05N60D ..MIXA80R1200VA
MIXA80W1200TED ..MWI75-12T8T
MWI80-12T6K ..RJP60D0DPK
RJP60D0DPM ..SGS6N60UF
SGS6N60UFD ..SKM400GB123D
SKM400GB124D ..STGB10NB60S
STGB10NC60HD ..STGW20NC60VD
STGW25H120DF ..VWI35-06P1
 
G20N60B3D All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

G20N60B3D IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: G20N60B3D

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 165W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 40A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 25

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for G20N60B3D

G20N60B3D PDF doc:

1.1. hgtg20n60b3d.pdf Size:176K _fairchild_semi

G20N60B3D
G20N60B3D
HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode • 40A, 600V at TC = 25oC The HGTG20N60B3D is a MOS gated high voltage • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC switching device combining the best features of MOSFETs • Short Circuit Rated and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction • Low Conduction Loss loss of a bipolar transistor. The much lower on-state voltage • Hyperfast Anti-Parallel Diode drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. Packaging The IGBT is ideal for many high voltage switching JEDEC STYLE TO-247 applications operating at moderate frequencies where low E conduction losses are essential. C G Formerly developmental type TA49016. Ordering Information PART NUMBER PACKAGE BRAND HGTG20N60B3D TO-247 G20N6

2.1. hgtg20n60b3.pdf Size:236K _fairchild_semi

G20N60B3D
G20N60B3D
HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high • 40A, 600V at TC = 25oC voltage switching devices combining the best features of • 600V Switching SOA Capability MOSFETs and bipolar transistors. These devices have the • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on- • Short Circuit Rated state voltage drop varies only moderately between 25oC and • Low Conduction Loss 150oC. • Related Literature The IGBT is ideal for many high voltage switching - TB334 “Guidelines for Soldering Surface Mount applications operating at moderate frequencies where low Components to PC Boards” conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays Packaging and contactors. JEDEC STYLE TO-247

4.1. hgtg20n60a4_hgtp20n60a4.pdf Size:136K _fairchild_semi

G20N60B3D
G20N60B3D
HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated • >100kHz Operation at 390V, 20A high voltage switching devices combining the best features • 200kHz Operation at 390V, 12A of MOSFETs and bipolar transistors. These devices have the • 600V Switching SOA Capability high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower • Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125oC on-state voltage drop varies only moderately between 25oC • Low Conduction Loss and 150oC. • Temperature Compensating SABER™ Model This IGBT is ideal for many high voltage switching www.intersil.com applications operating at high frequencies where low conduction losses are essential. This device has been • Related Literature optimized for high frequency switch mode power - TB334 “Guidelines for Soldering Surface Mount supplies.

4.2. hgtg20n60a4d.pdf Size:148K _fairchild_semi

G20N60B3D
G20N60B3D
HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode • >100kHz Operation At 390V, 20A The HGTG20N60A4D is a MOS gated high voltage switching • 200kHz Operation At 390V, 12A device combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar • Typical Fall Time . . . . . . . . . . . . . . . . 55ns at TJ = 125oC transistor. The much lower on-state voltage drop varies only • Low Conduction Loss moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel • Temperature Compensating SABER™ Model is the development type TA49372. www.fairchildsemi.com This IGBT is ideal for many high voltage switching Packaging applications operating at high frequencies where low JEDEC STYLE TO-247 conduction losses are essential.

4.3. hgt1s20n60c3s_hgtp20n60c3_hgtg20n60c3.pdf Size:140K _fairchild_semi

G20N60B3D
G20N60B3D
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices • 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. These devices have the high input impedance of • Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only • Short Circuit Rating moderately between 25oC and 150oC. • Low Conduction Loss The IGBT is ideal for many high voltage switching • Related Literature applications operating at moderate frequencies where low - TB334 “Guidelines for Soldering Surface Mount conduction losses are essential, such as: AC and DC motor Components to PC Boards” controls, power supplies and drivers for solenoids, relays and contactors. Packaging Formerly developme

See also transistors datasheet: G12N50C1 , G12N50C1D , G12N50E1 , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , FII50-12E , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D .

Keywords

 G20N60B3D Datasheet  G20N60B3D Datenblatt  G20N60B3D RoHS  G20N60B3D Distributor
 G20N60B3D Application Notes  G20N60B3D Component  G20N60B3D Circuit  G20N60B3D Schematic
 G20N60B3D Equivalent  G20N60B3D Cross Reference  G20N60B3D Data Sheet  G20N60B3D Fiche Technique

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