G30N60C3 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: G30N60C3

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 208W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.8V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 63A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 40

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for G30N60C3

G30N60C3 PDF document for downloads:

1.1. hgtg30n60c3d.pdf Size:268K _fairchild_semi

HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes • 63A, 600V at TC = 25oC The HGTG30N60C3D is a MOS gated high voltage • Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC switching device combining the best features of MOSFETs • Short Circuit Rating and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction • Low Conduction Loss loss of a bipolar transistor. The much lower on-state voltage • Hyperfast Anti-Parallel Diode drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49051. The diode Packaging used in anti-parallel with the IGBT is the development type JEDEC STYLE TO-247 TA49053. The IGBT is ideal for many high voltage switching applications E operating at moderate frequencies where low conduction C G losses are essential. Formerly Developmental Type T

4.1. hgtg30n60b3d.pdf Size:212K _fairchild_semi

HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT Packaging with Anti-Parallel Hyperfast Diode JEDEC STYLE TO-247 E The HGTG30N60B3D is a MOS gated high voltage switching C device combining the best features of MOSFETs and bipolar G transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching Symbol applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor C controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49172. G Ordering Information PART NUMBER PACKAGE BRAND E HGTG30N60B3D TO-247 G30N60B3D

4.2. hgtg30n60a4.pdf Size:161K _fairchild_semi

HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching • >100kHz Operation at 390V, 30A device combining the best features of MOSFETs and bipolar • 200kHz Operation at 390V, 18A transistors. This device has the high input impedance of a • 600V Switching SOA Capability MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only • Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oC moderately between 25oC and 150oC. • Low Conduction Loss This IGBT is ideal for many high voltage switching • Temperature Compensating SABER™ Model applications operating at high frequencies where low www.fairchildsemi.com conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Packaging Formerly Developmental Type TA49343. JEDEC STYLE TO-247 E Ordering Information C G

4.3. hgtg30n60a4d.pdf Size:173K _fairchild_semi

HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode • >100kHz Operation At 390V, 30A The HGTG30N60A4D is a MOS gated high voltage • 200kHz Operation At 390V, 18A switching devices combining the best features of MOSFETs • 600V Switching SOA Capability and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction • Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oC loss of a bipolar transistor. The much lower on-state voltage • Low Conduction Loss drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode • Temperature Compensating SABER™ Model used in anti-parallel is the development type TA49373. www.fairchildsemi.com This IGBT is ideal for many high voltage switching Packaging applications operating at high frequencies where low JEDEC STYLE TO-247 conduction losses are essenti

4.4. hgtg30n60b3.pdf Size:204K _fairchild_semi

HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching • 60A, 600V, TC = 25oC device combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. This device has the high input impedance of a • Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only • Short Circuit Rating moderately between 25oC and 150oC. • Low Conduction Loss The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low Packaging conduction losses are essential, such as: AC and DC motor JEDEC STYLE TO-247 controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49170. E C G Ordering Information PART NUMBER PACKAGE BRAND COLLECTOR HGTG30N60B3 TO-

See also transistors datasheet: G12N50C1D , G12N50E1 , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , G20N60B3D , G12N60D1 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D , G6N50E .

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