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G34N100E2 IGBT (IC) Datasheet. Cross Reference Search. G34N100E2 Equivalent

Type Designator: G34N100E2

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 208W

Maximum collector-emitter voltage |Uce|, V: 1000V

Collector-emitter saturation voltage |Ucesat|, V: 2.8V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 55A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 100

Maximum collector capacity (Cc), pF:

Package: TO247

G34N100E2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

G34N100E2 PDF doc:

5.1. hgtg34n1.pdf Size:51K _harris_semi

G34N100E2
G34N100E2

S E M I C O N D U C T O R HGTG34N100E2 34A, 1000V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 34A, 1000V EMITTER Latch Free Operation COLLECTOR Typical Fall Time - 710ns COLLECTOR GATE (BOTTOM SIDE High Input Impedance METAL) Low Conduction Loss Description The HGTG34N100E2 is a MOS gated high voltage switching device combining the best features of MOSF

See also transistors datasheet: G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D , IRGBC20S , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D , G6N50E , G6N50E1D , G7N60C .

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