All IGBT. G34N100E2 Datasheet

 

G34N100E2 IGBT. Datasheet pdf. Equivalent

Type Designator: G34N100E2

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 208W

Maximum Collector-Emitter Voltage |Vce|, V: 1000V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.8V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 55A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 100

Package: TO247

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G34N100E2 PDF doc:

5.1. hgtg34n1.pdf Size:51K _harris_semi

G34N100E2
G34N100E2

S E M I C O N D U C T O R HGTG34N100E2 34A, 1000V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 34A, 1000V EMITTER Latch Free Operation COLLECTOR Typical Fall Time - 710ns COLLECTOR GATE (BOTTOM SIDE High Input Impedance METAL) Low Conduction Loss Description The HGTG34N100E2 is a MOS gated high voltage switching device combining the best features of MOSF

Datasheet: G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D , IRGBC20S , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D , G6N50E , G6N50E1D , G7N60C .

 


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