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IXGT64N60A3 IGBT (IC) Datasheet. Cross Reference Search. IXGT64N60A3 Equivalent

Type Designator: IXGT64N60A3

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.35V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: A

Maximum junction temperature (Tj), °C:

Rise time, nS: 222

Maximum collector capacity (Cc), pF:

Package: TO268

IXGT64N60A3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGT64N60A3 PDF doc:

1.1. ixgt64n60a3.pdf Size:192K _igbt_a

IXGT64N60A3
IXGT64N60A3

Preliminary Technical Information IXGH64N60A3 VCES = 600V GenX3TM 600V IGBT IXGT64N60A3 IC110 = 64A Ultra-lowVsat PT IGBTs for up to ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ 5 kHz switching Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G C (TAB) C IC11

1.2. ixgt64n60b3.pdf Size:163K _igbt_a

IXGT64N60A3
IXGT64N60A3

Preliminary Technical Information IXGH64N60B3 VCES = 600V GenX3TM 600V IGBT IXGT64N60B3 IC110 = 64A Medium speed low Vsat PT ≤ VCE(sat) ≤ ≤ 1.8V ≤ ≤ IGBTs for 5 - 40kHz switching tfi(typ) = 88ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30

5.1. ixgh60n60c2_ixgt60n60c2.pdf Size:583K _ixys

IXGT64N60A3
IXGT64N60A3

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25C (limited by leads) 75 A

5.2. ixgh60n60b2_ixgt60n60b2.pdf Size:578K _ixys

IXGT64N60A3
IXGT64N60A3

Advance Technical Data VCES = 600 V IXGH 60N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 60N60B2 VCE(sat) < 1.8 V Optimized for 10-25 kHz hard tfi typ = 100 ns switching and up to 100 KHz resonant switching TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V

5.3. ixgh60n60_ixgk60n60_ixgt60n60.pdf Size:95K _ixys

IXGT64N60A3
IXGT64N60A3

VCES = 600 V Ultra-Low VCE(sat) IGBT IXGH 60N60 IC25 = 75 A IXGK 60N60 VCE(sat) = 1.7 V IXGT 60N60 Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 IC25 TC = 25C, limited by leads 75 A (IXGT) IC90 TC = 90C60 A G E ICM TC = 25C, 1 ms 200 A

5.4. ixgt60n60.pdf Size:94K _igbt_a

IXGT64N60A3
IXGT64N60A3

VCES = 600 V Ultra-Low VCE(sat) IGBT IXGH 60N60 IC25 = 75 A IXGK 60N60 VCE(sat) = 1.7 V IXGT 60N60 Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G C VGES Continuous ±20 V E VGEM Transient ±30 V TO-268 IC25 TC = 25°C, limited by leads 75 A (IXGT) IC90 TC = 90°C60 A G E ICM TC = 25°C,

5.5. ixgt60n60b2.pdf Size:576K _igbt_a

IXGT64N60A3
IXGT64N60A3

Advance Technical Data VCES = 600 V IXGH 60N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 60N60B2 VCE(sat) < 1.8 V Optimized for 10-25 kHz hard tfi typ = 100 ns switching and up to 100 KHz resonant switching TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Trans

5.6. ixgt60n60c2.pdf Size:581K _igbt_a

IXGT64N60A3
IXGT64N60A3

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E TO-268 IC25 TC = 25°C (limited by

5.7. ixgt6n170ahv.pdf Size:197K _igbt_a

IXGT64N60A3
IXGT64N60A3

Advance Technical Information High Voltage VCES = 1700V IXGT6N170AHV IC25 = 6A IGBT ≤ VCE(sat) ≤ 7.0V ≤ ≤ ≤ tfi(typ) = 32ns TO-268 G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25°C to 150°C 1700 V G = Gate C = Collector VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V E = Emiiter Tab = Collector VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC

5.8. ixgt60n60c3d1.pdf Size:236K _igbt_a

IXGT64N60A3
IXGT64N60A3

VCES = 600V GenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60A with Diode IXGT60N60C3D1 ≤ ≤ VCE(sat) ≤ 2.5V ≤ ≤ tfi (typ) = 50ns High Speed PT IGBTs for 40-100kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V C C (Tab) E VGES Continuous ±20 V VGEM Transient ±30 V IC25

5.9. ixgt6n170a.pdf Size:189K _igbt_a

IXGT64N60A3
IXGT64N60A3

Preliminary Technical Information High Voltage VCES = 1700V IXGH6N170A IGBTs IC25 = 6A IXGT6N170A ≤ ≤ VCE(sat) ≤ 7.0V ≤ ≤ tfi(typ) = 32ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V G C C (TAB) E VGES Continuous ± 20 V VGEM Transient ± 30 V TO-268 (IXGT) IC25 TC = 25°C 6 A

5.10. ixgt6n170.pdf Size:78K _igbt_a

IXGT64N60A3
IXGT64N60A3

IXGH 6N170 High Voltage VCES = 1700 V IXGT 6N170 IC25 = 12 A IGBT VCE(sat) = 4.0 V tfi(typ) = 290 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V G VGES Continuous ± 20 V E C (TAB) VGEM Transient ± 30 V IC25 TC = 25°C12 A TO-247 AD (IXGH) IC90 TC = 90°C6 A ICM TC = 25°C, 1 ms 24 A SSOA

See also transistors datasheet: IXGT45N120 , IXGT4N250C , IXGT50N60B2 , IXGT50N60C2 , IXGT50N90B2 , IXGT60N60B2 , IXGT60N60C2 , IXGT60N60C3D1 , FII50-12E , IXGT64N60B3 , IXGT6N170 , IXGT6N170A , IXGT72N60A3 , IXGT72N60B3 , IXGV25N250S , IXGX100N170 , IXGX120N120A3 .

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