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G3N60C IGBT (IC) Datasheet. Cross Reference Search. G3N60C Equivalent

Type Designator: G3N60C

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 33W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.65V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 6A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 5

Maximum collector capacity (Cc), pF:

Package: TO252AA

G3N60C Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D , G34N100E2 , STGW38IH130D , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D , G6N50E , G6N50E1D , G7N60C , G7N60C3 .

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 G3N60C - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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IGBT: IRGP6660D | IRGP4660D | IRGP4063D1 | NGTB40N120IHLWG | NGTB40N120IHL | NGTB30N120IHLWG | NGTB30N120IHL | STGWA25M120DF3 | STGW25M120DF3 | IRGP4760D |

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