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IXGX28N140B3H1 IGBT (IC) Datasheet. Cross Reference Search. IXGX28N140B3H1 Equivalent

Type Designator: IXGX28N140B3H1

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1400V

Collector-emitter saturation voltage |Ucesat|, V: 3.6V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 60A

Maximum junction temperature (Tj), °C:

Rise time, nS: 360

Maximum collector capacity (Cc), pF:

Package: PLUS247

IXGX28N140B3H1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

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IXGX28N140B3H1
IXGX28N140B3H1

GenX3TM 1400V VCES = 1400V IXGH28N140B3H1 IC110 = 28A IGBTs w/ Diode IXGX28N140B3H1 ≤ ≤ VCE(sat) ≤ 3.60V ≤ ≤ IXGK28N140B3H1 Avalanche Rated TO-247 (IXGH) G C Tab E Symbol Test Conditions Maximum Ratings PLUS247 (IXGX) VCES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1400 V VGES Continuous ±20 V VGEM Transient ±30 V G C IC25 TC = 25°C

See also transistors datasheet: IXGV25N250S , IXGX100N170 , IXGX120N120A3 , IXGX120N120B3 , IXGX120N60A3 , IXGX120N60B3 , IXGX120N60C2 , IXGX12N90C , FGH40N60UFD , IXGX320N60A3 , IXGX320N60B3 , IXGX32N170AH1 , IXGX32N170H1 , IXGX35N120B , IXGX35N120BD1 , IXGX35N120C , IXGX35N120CD1 .

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