IXGX35N120C IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IXGX35N120C

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 4V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 70A

Maximum junction temperature (Tj), °C:

Rise time, nS: 115

Maximum collector capacity (Cc), pF:

Package: PLUS247

Equivalent transistors for IXGX35N120C

IXGX35N120C PDF document for downloads:

1.1. ixgk35n120b_ixgk35n120bd1_ixgx35n120b_ixgx35n120bd1.pdf Size:1845K _ixys

Preliminary Data Sheet IXGK 35N120B VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120B IC25 = 70 A IXGK 35N120BD1 VCE(sat) = 3.3 V IXGX 35N120BD1 tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 1200 V VGES Continuous ±20 V G C C (TAB) VGEM Transient ±30 V E IC25 TC = 25°C70 A IC90 TC = 90°C35 A ICM TC = 25°C, 1 ms 140 A PLUS 247TM (IXGX) SSOA VGE = 15 V, TVJ = 125°C, RG = 5 ? ICM = 90 A (RBSOA) Clamped inductive load @ 0.8 VCES PC TC = 25°C 350 W C (TAB) TJ -55 ... +150 °C G C TJM 150 °C E Tstg -55 ... +150 °C G = Gate, C = Collector, Maximum Lead temperature for soldering 300 °C E = Emitter, TAB = Collector 1.6 mm (0.062 in.) from case for 10 s Features Md Mounting torque (M3) (IXGK) 1.13/10Nm/lb.in. ? International standard packages Weight TO-264 AA 10 g JEDEC TO-264 and PLUS247TM ? PLUS247TM 6 g Low switching losses, low V(sat) ? MOS Gate turn-on -

5.1. ixgx32n170h1.pdf Size:523K _ixys

Advance Technical Information IXGX 32N170H1 VCES = 1700 V High Voltage IC25 = 75 A IGBT with Diode VCE(sat) = 3.3 V tfi(typ) = 290 ns PLUS247 (IXGX) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 1700 V VGES Continuous ±20 V (TAB) G VGEM Transient ±30 V C E IC25 TC = 25°C75 A G = Gate, C = Collector, IC90 TC = 90°C32 A E = Emitter, TAB = Collector ICM TC = 25°C, 1 ms 200 A SSOA VGE = 15 V, TVJ = 125°C, RG = 5? ICM = 90 A (RBSOA) Clamped inductive load @ 0.8 VCES tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10? 10 µs Features High current handling capability PC TC = 25°C 350 W MOS Gate turn-on TJ -55 ... +150 °C - drive simplicity TJM 150 °C Rugged NPT structure Molding epoxies meet UL 94 V-0 Tstg -55 ... +150 °C flammability classification FC Mounting force with chip 22...130/5...30 N/lb Applications Capacitor discharge & pulser circuits Maximum lead temperature for solder

See also transistors datasheet: IXGX12N90C , IXGX28N140B3H1 , IXGX320N60A3 , IXGX320N60B3 , IXGX32N170AH1 , IXGX32N170H1 , IXGX35N120B , IXGX35N120BD1 , 1MB30-060 , IXGX35N120CD1 , IXGX400N30A , IXGX400N30A3 , IXGX40N60BD1 , IXGX50N120C3H1 , IXGX50N60A2D1 , IXGX50N60B2D1 , IXGX50N60BD1 .

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