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G40N60B3 IGBT (IC) Datasheet. Cross Reference Search. G40N60B3 Equivalent

Type Designator: G40N60B3

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 290W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 70A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 47

Maximum collector capacity (Cc), pF:

Package: TO247

G40N60B3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

G40N60B3 PDF doc:

1.1. hgtg40n60b3.pdf Size:138K _fairchild_semi

G40N60B3
G40N60B3

HGTG40N60B3 Data Sheet November 2004 File Number 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching 70A, 600V, TC = 25oC device combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. The device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150o

1.2. hgtg40n60b3.pdf Size:65K _harris_semi

G40N60B3
G40N60B3

S E M I C O N D U C T O R HGTG40N60B3 PRELIMINARY 70A, 600V, UFS Series N-Channel IGBT May 1995 Features Package JEDEC STYLE TO-247 70A, 600V at TC = +25oC E Square Switching SOA Capability C G Typical Fall Time - 160ns at +150oC Short Circuit Rating Low Conduction Loss Description The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of

4.1. hgtg40n60a4.pdf Size:160K _fairchild_semi

G40N60B3
G40N60B3

HGTG40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching 100kHz Operation At 390V, 40A device combining the best features of a MOSFET and a 200kHz Operation At 390V, 20A bipolar transistor. This device has the high input impedance 600V Switching SOA Capability of a MOSFET and the low on-state co

4.2. ixgh40n60c2d1_ixgt40n60c2d1_ixgg40n60c2d1.pdf Size:162K _ixys

G40N60B3
G40N60B3

HiPerFASTTM IGBT IXGH40N60C2D1 VCES = 600V IXGT40N60C2D1 IC25 = 75A with Diode ? ? IXGJ40N60C2D1 VCE(SAT) ? 2.7V ? ? tfi(typ) = 32ns C2-Class High Speed IGBTs TO-247(IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25C to 150C 600 V C (TAB) C E VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V TO-268 (D3) ( IXGT) VGEM Transient 30 V IC25 TC = 25C (li

See also transistors datasheet: G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , SGH80N60UFD , G6N40E , G6N40E1D , G6N50E , G6N50E1D , G7N60C , G7N60C3 , G7N60C3D , G8P50G .

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