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G6N40E IGBT (IC) Datasheet. Cross Reference Search. G6N40E Equivalent

Type Designator: G6N40E

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 60W

Maximum collector-emitter voltage |Uce|, V: 400V

Collector-emitter saturation voltage |Ucesat|, V: 2.5V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 7.5A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 90

Maximum collector capacity (Cc), pF:

Package: TO251AA

G6N40E Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , CT60AM-20 , G6N40E1D , G6N50E , G6N50E1D , G7N60C , G7N60C3 , G7N60C3D , G8P50G , GA100TS120U .

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 G6N40E - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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