IXGX75N250 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IXGX75N250

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 2500V

Collector-emitter saturation voltage |Ucesat|, V: 2.7V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 170A

Maximum junction temperature (Tj), °C:

Rise time, nS: 455

Maximum collector capacity (Cc), pF:

Package: PLUS247

Equivalent transistors for IXGX75N250

IXGX75N250 PDF document for downloads:

1.1. ixgk75n250-ixgx75n250.pdf Size:174K _ixys

Preliminary Technical Information High Voltage IGBTs VCES = 2500V IXGK75N250 IC110 = 75A IXGX75N250 For Capacitor Discharge ? ? VCE(sat) ? 2.7V ? ? Applications TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 2500 V C E VCGR TJ = 25°C to 150°C, RGE = 1M? 2500 V Tab VGES Continuous ±20 V VGEM Transient ±30 V PLUS247TM (IXGX) IC25 TC = 25°C ( Chip Capability ) 170 A IC110 TC = 110°C 75 A ILRMS TC = 25°C (Lead RMS Limit) 160 A ICM TC = 25°C, VGE = 20V, 1ms 530 A G C SSOA VGE= 15V, TVJ = 125°C, RG = 1? ICM = 200 A Tab E (RBSOA) Clamped Inductive Load @ 0.8 • VCES PC TC = 25°C 780 W TJ -55 ... +150 °C G = Gate E = Emitter C = Collector Tab = Collector TJM 150 °C Tstg -55 ... +150 °C TL Maximum Lead Temperature for Soldering 300 °C Features TSOLD 1.6 mm (0.062 in.) from Case for 10 260 °C Very High Peak Current Capability Md Mounting Torque ( IXGK ) 1.13/10 Nm/lb.in. Low Saturation Voltage FC Mounting Force ( I

5.1. ixgx72n60c3h1.pdf Size:213K _ixys

VCES = 600V GenX3TM 600V IGBT IXGX72N60C3H1 IC110 = 72A with Diode ? VCE(sat) ? ?? 2.5V ? ? tfi(typ) = 55ns High-Speed PT IGBT for 40-100kHz Switching PLUS247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1M? 600 V G G D VGES Continuous ±20 V C ES Tab VGEM Transient ±30 V IC25 TC = 25°C (Limited by Leads) 75 A G = Gate C = Collector IC110 TC = 110°C (Chip Capability) 72 A E = Emitter Tab = Collector ICM TC = 25°C, 1ms 360 A IA TC = 25°C 50 A EAS TC = 25°C 500 mJ Features SSOA VGE = 15V, TVJ = 125°C, RG = 2? ICM = 150 A (RBSOA) Clamped Inductive Load VCE ? VCES Optimized for Low Switching Losses Square RBSOA PC TC = 25°C 540 W Avalanche Rated TJ -55 ... +150 °C Anti-Parallel Ultra Fast Diode TJM 150 °C International Standard Package Tstg -55 ... +150 °C MF Mounting Force 20..120 / 4.5..27 N/lb. Advantages TL Maximum Lead Temperature for Soldering 300 °C High Power Density

5.2. ixgk72n60a3h1_ixgx72n60a3h1.pdf Size:229K _ixys

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGK72N60A3H1 w/Diode IC110 = 72A IXGX72N60A3H1 ? VCE(sat) ? ?? 1.35V ? ? tfi(typ) = 250ns Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1M? 600 V (TAB) G VGES Continuous ±20 V C E VGEM Transient ±30 V IC25 TC = 25°C (Limited by Leads) 75 A PLUS247 (IXGX) IC110 TC = 110°C72 A IF110 TC = 110°C68 A ICM TC = 25°C, 1ms 400 A SSOA VGE = 15V, TVJ = 125°C, RG = 3? ICM = 150 A G G (TAB) D (RBSOA) Clamped Inductive Load @ VCE ? 600 V C ES PC TC = 25°C 540 W G = Gate C = Collector TJ -55 ... +150 °C E = Emitter TAB = Collector TJM 150 °C Tstg -55 ... +150 °C Features Md Mounting Torque (TO-264) 1.13 / 10 Nm/lb.in. FC Mounting Force (PLUS247) 20..120 / 4.5..27 N/lb. Optimized for Low Conduction Losses Square RBSOA TL Maximum Lead Temperature for Soldering 300 °C Ant

See also transistors datasheet: IXGX50N90B2D1 , IXGX55N120A3H1 , IXGX60N60B2D1 , IXGX60N60C2D1 , IXGX64N60B3D1 , IXGX72N60A3H1 , IXGX72N60B3H1 , IXGX72N60C3H1 , IRG4PC50UD , IXGX82N120A3 , IXGX82N120B3 , IXGY2N120 , IXLF19N250A , IXRA15N120 , IXRH25N120 , IXRH40N120 , IXRP15N120 .

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