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G6N50E IGBT (IC) Datasheet. Cross Reference Search. G6N50E Equivalent

Type Designator: G6N50E

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 60W

Maximum Collector-Emitter Voltage |Vce|, V: 500V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 7.5A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 90

Maximum Collector Capacity (Cc), pF:

Package: TO252AA

G6N50E Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D , 20N60C3R , G6N50E1D , G7N60C , G7N60C3 , G7N60C3D , G8P50G , GA100TS120U , GA100TS60U , GA125TS120U .

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 G6N50E - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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IGBT: IXYH30N65C3H1 | IXYH30N65C3 | IXYH30N65B3D1 | IXYH30N450HV | IXYH30N170C | IXYH24N90C3D1 | IXYH24N90C3 | IXYH20N65C3 | IXYH20N65B3 | IXYH120N65C3 |

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