IXSP20N60B2 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IXSP20N60B2

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.5V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 35A

Maximum junction temperature (Tj), °C:

Rise time, nS: 126

Maximum collector capacity (Cc), pF:

Package: TO220

Equivalent transistors for IXSP20N60B2

IXSP20N60B2 PDF document for downloads:

5.1. ixsp24n60b.pdf Size:69K _ixys

IXSP 24N60B VCES = 600 V High Speed IGBT IC25 = 48 A VCE(sat) = 2.5 V Short Circuit SOA Capability tfi typ = 170 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXSP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 600 V VGES Continuous ±20 V C (TAB) G C VGEM Transient ±30 V E IC25 TC = 25°C48 A IC90 TC = 90°C24 A G = Gate ICM TC = 25°C, 1 ms 96 A E = Emitter TAB = Collector SSOA VGE= 15 V, TJ = 125°C, RG = 33 ? ICM = 48 A (RBSOA) Clamped inductive load, VCC= 0.8 VCES @ 0.8 VCES tSC VGE = 15 V, VCE = 360 V, TJ = 125°C 10 µs Features (SCSOA) RG = 33 ?, non repetitive International standard packages PC TC = 25°C 150 W Guaranteed Short Circuit SOA TJ -55 ... +150 °C capability TJM 150 °C Low VCE(sat) - for low on-state conduction losses Tstg -55 ... +150 °C High current handling capability Weight 2 g MOS Gate turn-on - drive simplicity Maximum lead temperature for soldering 300 °C Fast Fall

See also transistors datasheet: IXSH35N120B , IXSH40N60B2D1 , IXSH45N120B , IXSK35N120BD1 , IXSK80N60B , IXSN80N60BD1 , IXSP10N60B2D1 , IXSP15N120B , G12N60C3D , IXSP20N60B2D1 , IXSP24N60B , IXSQ10N60B2D1 , IXSQ20N60B2D1 , IXSR35N120BD1 , IXSR40N60BD1 , IXSR40N60CD1 , IXST15N120BD1 .

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