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G6N50E1D IGBT (IC) Datasheet. Cross Reference Search. G6N50E1D Equivalent

Type Designator: G6N50E1D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75W

Maximum Collector-Emitter Voltage |Vce|, V: 500V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.9V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 10A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 90

Maximum Collector Capacity (Cc), pF:

Package: TO220AB

G6N50E1D Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D , G6N50E , IRGP4062D , G7N60C , G7N60C3 , G7N60C3D , G8P50G , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U .

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IGBT: IXYH30N65C3H1 | IXYH30N65C3 | IXYH30N65B3D1 | IXYH30N450HV | IXYH30N170C | IXYH24N90C3D1 | IXYH24N90C3 | IXYH20N65C3 | IXYH20N65B3 | IXYH120N65C3 |

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