All IGBT. G6N50E1D Datasheet

 

G6N50E1D IGBT. Datasheet pdf. Equivalent

Type Designator: G6N50E1D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75W

Maximum Collector-Emitter Voltage |Vce|, V: 500V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.9V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 10A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 90

Package: TO220AB

G6N50E1D Transistor Equivalent Substitute - IGBT Cross-Reference Search

G6N50E1D 说明书

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Datasheet: G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D , G6N50E , IRGP4062D , G7N60C , G7N60C3 , G7N60C3D , G8P50G , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U .

 


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IGBT: VS-GT75NP120N | VS-GT50TP60N | VS-GT50TP120N | VS-GT400TH60N | VS-GT400TH120U | VS-GT400TH120N | VS-GT300YH120N | VS-GT300FD060N | VS-GT175DA120U | VS-GT140DA60U |

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