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G7N60C IGBT (IC) Datasheet. Cross Reference Search. G7N60C Equivalent

Type Designator: G7N60C

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 60W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 14A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 8.5

Maximum Collector Capacity (Cc), pF:

Package: TO252AA

G7N60C Transistor Equivalent Substitute - IGBT Cross-Reference Search

G7N60C PDF doc:

5.1. hgtp7n60a4_hgtg7n60a4_hgt1s7n60a4.pdf Size:173K _fairchild_semi

G7N60C
G7N60C

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7A are MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5A the best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capability devices have the high i

See also transistors datasheet: G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D , G6N50E , G6N50E1D , IRGP50B60PD1 , G7N60C3 , G7N60C3D , G8P50G , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U .

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