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IXST40N60B2D1 IGBT (IC) Datasheet. Cross Reference Search. IXST40N60B2D1 Equivalent

Type Designator: IXST40N60B2D1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W:

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 48A

Maximum Junction Temperature (Tj), °C:

Rise Time, nS: 140

Maximum Collector Capacity (Cc), pF:

Package: TO268

IXST40N60B2D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXST40N60B2D1 PDF doc:

1.1. ixsh40n60b_ixst40n60b.pdf Size:55K _ixys

IXST40N60B2D1
IXST40N60B2D1

IXSH 40N60B VCES = 600V High Speed IGBT IXST 40N60B IC25 = 75A VCE(sat) = 2.2V Short Circuit SOA Capability tfi typ = 100 ns Preliminary data TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V (TAB) VCGR TJ = 25C to 150C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25C75 A IC90 TC = 90C40

1.2. ixst40n60b.pdf Size:54K _igbt_a

IXST40N60B2D1
IXST40N60B2D1

IXSH 40N60B VCES = 600V High Speed IGBT IXST 40N60B IC25 = 75A VCE(sat) = 2.2V Short Circuit SOA Capability tfi typ = 100 ns Preliminary data TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V (TAB) VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G C VGES Continuous ±20 V E VGEM Transient ±30 V TO-268 (D3) ( IXST) IC25 TC = 25°C75 A IC90 TC

5.1. ixsh45n120b_ixst45n120b.pdf Size:54K _ixys

IXST40N60B2D1
IXST40N60B2D1

IXSH 45N120B High Voltage IGBT IC25 = 75 A IXST 45N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.0 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 MW 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25C (limited by leads) 75 A TO-268 ( IXST)

5.2. ixst45n120b.pdf Size:53K _igbt_a

IXST40N60B2D1
IXST40N60B2D1

IXSH 45N120B High Voltage IGBT IC25 = 75 A IXST 45N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.0 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C (limited by leads) 75 A TO-26

See also transistors datasheet: IXSR35N120BD1 , IXSR40N60BD1 , IXSR40N60CD1 , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B , SGW10N60A , IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 , IXSX80N60B , IXXA50N60B3 , IXXH100N60B3 , IXXH100N60C3 , IXXH30N60B3D1 .

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