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IXXH100N60C3 IGBT (IC) Datasheet. Cross Reference Search. IXXH100N60C3 Equivalent

Type Designator: IXXH100N60C3

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.2V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 190A

Maximum junction temperature (Tj), °C:

Rise time, nS: 75

Maximum collector capacity (Cc), pF:

Package: TO247

IXXH100N60C3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXXH100N60C3 PDF doc:

1.1. ixxh100n60b3.pdf Size:173K _ixys

IXXH100N60C3
IXXH100N60C3

Advance Technical Information VCES = 600V XPTTM 600V IXXH100N60B3 IC110 = 100A GenX3TM ? ? VCE(sat) ? 1.80V ? ? tfi(typ) = 150ns Extreme Light Punch Through IGBT for 10-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 175C 600 V VCGR TJ = 25C to 175C, RGE = 1M? 600 V G C Tab VGES Continuous 20 V E VGEM Transient 30 V IC25 TC= 25C

1.2. ixxh100n60c3.pdf Size:173K _ixys

IXXH100N60C3
IXXH100N60C3

Advance Technical Information VCES = 600V XPTTM 600V IXXH100N60C3 IC110 = 100A GenX3TM ? ? VCE(sat) ? 2.20V ? ? tfi(typ) = 75ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 175C 600 V G VCGR TJ = 25C to 175C, RGE = 1M? 600 V C Tab E VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Co

1.3. ixxh100n60b3.pdf Size:171K _igbt_a

IXXH100N60C3
IXXH100N60C3

Preliminary Technical Information XPTTM 600V VCES = 600V IXXH100N60B3 GenX3TM IC110 = 100A ≤ ≤ VCE(sat) ≤ 1.80V ≤ ≤ tfi(typ) = 150ns Extreme Light Punch Through IGBT for 10-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 600 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V G C Tab VGES Continuous ±20 V E VGEM Transien

1.4. ixxh100n60c3.pdf Size:171K _igbt_a

IXXH100N60C3
IXXH100N60C3

Advance Technical Information VCES = 600V XPTTM 600V IXXH100N60C3 IC110 = 100A GenX3TM ≤ ≤ VCE(sat) ≤ 2.20V ≤ ≤ tfi(typ) = 75ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 600 V G VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V C Tab E VGES Continuous ±20 V VGEM Transient ±3

See also transistors datasheet: IXST35N120B , IXST40N60B2D1 , IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 , IXSX80N60B , IXXA50N60B3 , IXXH100N60B3 , IXGP7N60B , IXXH30N60B3D1 , IXXH30N60C3D1 , IXXH50N60B3 , IXXH50N60B3D1 , IXXH50N60C3 , IXXH50N60C3D1 , IXXH75N60B3 , IXXH75N60B3D1 .

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