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G8P50G IGBT (IC) Datasheet. Cross Reference Search. G8P50G Equivalent

Type Designator: G8P50G

Type of IGBT channel: P-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 66W

Maximum collector-emitter voltage |Uce|, V: 500V

Collector-emitter saturation voltage |Ucesat|, V: 2.5V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 3A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 45

Maximum collector capacity (Cc), pF:

Package: TO252AA

G8P50G Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: G40N60B3 , G6N40E , G6N40E1D , G6N50E , G6N50E1D , G7N60C , G7N60C3 , G7N60C3D , FGH40N60UFD , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U .

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IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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