All IGBT. G8P50G Datasheet

 

G8P50G IGBT. Datasheet pdf. Equivalent

Type Designator: G8P50G

Type of IGBT Channel: P-Channel

Maximum Power Dissipation (Pc), W: 66W

Maximum Collector-Emitter Voltage |Vce|, V: 500V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 3A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 45

Package: TO252AA

G8P50G Transistor Equivalent Substitute - IGBT Cross-Reference Search

G8P50G PDF doc:

5.1. irg8p50n120kd.pdf Size:615K _igbt_a

G8P50G
G8P50G

IRG8P50N120KDPbF IRG8P50N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 50A, TC =100°C tSC 10µs, TJ(max) = 150°C C E G E G C G E VCE(ON) typ. = 1.7V @ IC = 35A IRG8P50N120KDPbF  IRG8P50N120KD‐EPbF  n-channel TO‐247AC  Applications TO‐247AD  G C E • Industrial Motor Drive Gate Collector Em

Datasheet: G40N60B3 , G6N40E , G6N40E1D , G6N50E , G6N50E1D , G7N60C , G7N60C3 , G7N60C3D , FGH40N60UFD , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U .

 


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IGBT: VS-GT75NP120N | VS-GT50TP60N | VS-GT50TP120N | VS-GT400TH60N | VS-GT400TH120U | VS-GT400TH120N | VS-GT300YH120N | VS-GT300FD060N | VS-GT175DA120U | VS-GT140DA60U |

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