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MII300-12A4 IGBT (IC) Datasheet. Cross Reference Search. MII300-12A4 Equivalent

Type Designator: MII300-12A4

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 2.2V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 330A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: Y3-DCB

MII300-12A4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

MII300-12A4 PDF doc:

1.1. mii300-12a4.pdf Size:191K _igbt

MII300-12A4
MII300-12A4

MII 300-12A4 MID 300-12A4 MDI 300-12A4 IC25 = 330 A IGBT Modules VCES = 1200 V Short Circuit SOA Capability VCE(sat) typ. = 2.2 V Square RBSOA MII 300-12A4 MID 300-12A4 MDI 300-12A4 11 10 3 3 3 9 T1 T1 8 D1 D1 D11 3 2 8 8 1 1 9 1 1 9 T2 T2 D2 D12 D2 11 11 E72873 10 2 10 2 2 Features IGBTs T1 - T2 • NPT IGBT technology Symbol Conditions Maximum Ratings

See also transistors datasheet: MID400-12E4 , MIEB100W1200TEH , MIEB101H1200EH , MIEB101W1200EH , MII100-12A3 , MII145-12A3 , MII150-12A4 , MII200-12A4 , IRG4PH50U , MII300-12E4 , MII400-12E4 , MII75-12A3 , MIO1200-25E10 , MIO1200-33E10 , MIO1200-33E11 , MIO1500-25E10 , MIO1800-17E10 .

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