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GA125TS120U IGBT (IC) Datasheet. Cross Reference Search. GA125TS120U Equivalent

Type Designator: GA125TS120U

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 625W

Maximum Collector-Emitter Voltage |Vce|, V: 1200V

Collector-Emitter saturation Voltage |Vcesat|, V: 3.00V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 125A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS:

Maximum Collector Capacity (Cc), pF:

Package: INT-A-PAK

GA125TS120U Transistor Equivalent Substitute - IGBT Cross-Reference Search

GA125TS120U PDF doc:

1.1. ga125ts120u.pdf Size:221K _international_rectifier

GA125TS120U
GA125TS120U

PD - 50053B GA125TS120U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 2.2V kHz in resonant mode • Very low conduction and switching losses @VGE = 15V, IC = 125A • HEXFRED™ antiparallel diodes with ultra- soft recovery •

See also transistors datasheet: G6N50E , G6N50E1D , G7N60C , G7N60C3 , G7N60C3D , G8P50G , GA100TS120U , GA100TS60U , G20N60B3 , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U .

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 GA125TS120U - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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