All IGBT. GA125TS120U Datasheet

 

GA125TS120U IGBT. Datasheet pdf. Equivalent

Type Designator: GA125TS120U

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 625W

Maximum Collector-Emitter Voltage |Vce|, V: 1200V

Collector-Emitter saturation Voltage |Vcesat|, V: 3.00V

Maximum Collector Current |Ic|, A: 125A

Maximum Junction Temperature (Tj), °C: 150

Package: INT-A-PAK

GA125TS120U Transistor Equivalent Substitute - IGBT Cross-Reference Search

GA125TS120U PDF doc:

1.1. ga125ts120u.pdf Size:221K _international_rectifier

GA125TS120U
GA125TS120U

PD - 50053B GA125TS120U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 2.2V kHz in resonant mode • Very low conduction and switching losses @VGE = 15V, IC = 125A • HEXFRED™ antiparallel diodes with ultra- soft recovery •

Datasheet: G6N50E , G6N50E1D , G7N60C , G7N60C3 , G7N60C3D , G8P50G , GA100TS120U , GA100TS60U , G20N60B3 , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U .

 


GA125TS120U
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GA125TS120U
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IGBT: VS-GT75NP120N | VS-GT50TP60N | VS-GT50TP120N | VS-GT400TH60N | VS-GT400TH120U | VS-GT400TH120N | VS-GT300YH120N | VS-GT300FD060N | VS-GT175DA120U | VS-GT140DA60U |

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