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MITB10WB1200TMH IGBT (IC) Datasheet. Cross Reference Search. MITB10WB1200TMH Equivalent

Type Designator: MITB10WB1200TMH

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 1.9V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 17A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: MiniPack_2

MITB10WB1200TMH Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: MIO1200-33E11 , MIO1500-25E10 , MIO1800-17E10 , MIO2400-17E10 , MIO600-65E11 , MITA10WB1200TMH , MITA15WB1200TMH , MITA30WB600TMH , IRG7IC28U , MITB15WB1200TMH , MIXA100W1200TEH , MIXA100W1200TEH , MIXA101W1200EH , MIXA101W1200EH , MIXA10W1200TMH , MIXA10W1200TMH , MIXA10W1200TML .

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IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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