1MB30-060 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: 1MB30-060

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 180W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 3V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 48A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 1200

Maximum collector capacity (Cc), pF:

Package: TO3P

Equivalent transistors for 1MB30-060

1MB30-060 PDF document for downloads:

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See also transistors datasheet: 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 , 1MB20D-060 , IXGR32N60CD1 , 1MBC03-120 , 1MBC05-060 , 1MBC05D-060 , 1MBC10-060 , 1MBC10D-060 , 1MBC15-060 , 1MBG05D-060 , 1MBG10D-060 .

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