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MWI35-12A7 IGBT (IC) Datasheet. Cross Reference Search. MWI35-12A7 Equivalent

Type Designator: MWI35-12A7

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 2.2V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 62A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: E2

MWI35-12A7 Transistor Equivalent Substitute - IGBT Cross-Reference Search

MWI35-12A7 PDF doc:

1.1. mwi35-12a7.pdf Size:89K _igbt

MWI35-12A7
MWI35-12A7

MWI 35-12 A7 IC25 = 62 A IGBT Modules VCES = 1200 V Sixpack VCE(sat) typ. = 2.2 V Short Circuit SOA Capability Square RBSOA 13 1 5 9 2 6 10 16 15 14 3 7 11 E72873 4 8 12 See outline drawing for pin arrangement 17 Features IGBTs ● NPT IGBT technology ● Symbol Conditions Maximum Ratings low saturation voltage ● low switching losses VCES TVJ = 25°C to 150°C 1200

2.1. mwi35-12t7t.pdf Size:202K _igbt

MWI35-12A7
MWI35-12A7

MWI 35-12T7T IC25 = 60 A Six-Pack VCES = 1200 V Trench IGBT VCE(sat) typ. = 1.7 V Part name (Marking on product) MWI 35-12T7T 15, 16 25, 26 1 5 9 17 2 6 10 23, 24 21, 22 NTC 19, 20 E72873 Pin configuration see outlines. 18 3 7 11 4 8 12 13, 14 27, 28 Features: Application: Package: • Trench IGBT technology • AC motor drives • "E2-Pack" standard outline • lo

See also transistors datasheet: MWI25-12A7 , MWI25-12A7T , MWI25-12E7 , MWI300-12E9 , MWI300-17E9 , MWI30-06A7 , MWI30-06A7T , MWI30-12E6K , IRG4PC50U , MWI35-12T7T , MWI450-12E9 , MWI451-17E9 , MWI45-12T6K , MWI50-06A7 , MWI50-06A7T , MWI50-12A7 , MWI50-12A7T .

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