MWI75-12T7T IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: MWI75-12T7T

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 1.7V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 110A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: E2

Equivalent transistors for MWI75-12T7T

MWI75-12T7T PDF document for downloads:

PDF unavailable!

See also transistors datasheet: MWI50-12E7 , MWI50-12T7T , MWI60-06G6K , MWI60-12T6K , MWI75-06A7 , MWI75-06A7T , MWI75-12A8 , MWI75-12E8 , GT60M102 , MWI75-12T8T , MWI80-12T6K , VII130-06P1 , VKI50-06P1 , VKI50-12P1 , VKI75-06P1 , VWI15-12P1 , VWI20-06P1 .

Keywords