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VWI35-06P1 IGBT (IC) Datasheet. Cross Reference Search. VWI35-06P1 Equivalent

Type Designator: VWI35-06P1

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.9V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 31A

Maximum junction temperature (Tj), °C:

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: ECO-PAC_2

VWI35-06P1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

VWI35-06P1 PDF doc:

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See also transistors datasheet: MWI75-12T8T , MWI80-12T6K , VII130-06P1 , VKI50-06P1 , VKI50-12P1 , VKI75-06P1 , VWI15-12P1 , VWI20-06P1 , GT15N101 , STGB10NB40LZ , STGB10NB60S , STGB10NC60HD , STGB10NC60K , STGB10NC60KD , STGB14NC60KD , STGB18N40LZ , STGB19NC60H .

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