STGB3NC120HD IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: STGB3NC120HD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 75W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 2.2V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 3A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: D2PAK

Equivalent transistors for STGB3NC120HD

STGB3NC120HD PDF document for downloads:

1.1. stgb3nc120hd_stgf3nc120hd_stgp3nc120hd.pdf Size:750K _st

STGB3NC120HD STGF3NC120HD, STGP3NC120HD 7 A, 1200 V very fast IGBT with ultrafast diode Features TAB ¦ High voltage capability ¦ High speed ¦ Very soft ultrafast recovery anti-parallel diode 3 3 2 2 1 1 Applications TO-220FP TO-220 ¦ Home appliance TAB ¦ Lighting 3 1 Description D?PAK This high voltage and very fast IGBT shows an excellent trade-off between low conduction losses and fast switching performance. It is designed in PowerMESH™ technology combined with high Figure 1. Internal schematic diagram voltage ultrafast diode. Table 1. Device summary Order codes Marking Packages Packaging STGB3NC120HDT4 GB3NC120HD D?PAK Tape and reel STGF3NC120HD GF3NC120HD TO-220FP Tube STGP3NC120HD GP3NC120HD TO-220 Tube January 2011 Doc ID 11089 Rev 4 1/16 www.st.com 16 Contents STGB3NC120HD, STGF3NC120HD, STGP3NC120HD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical char

4.1. stgb3nb60sd.pdf Size:339K _st

STGB3NB60SD N-CHANNEL 3A - 600V D2PAK Power MESH™ IGBT TYPE VCES VCE(sat) Ic STGB3NB60SD 600 V <1.5 V 3 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY 3 1 OFF LOSSES INCLUDE TAIL CURRENT INTEGRATED FREEWHEELING DIODE D2PAK SURFACE-MOUNTING D2PAK (TO-263) TO-263 POWER PACKAGE IN TAPE & REEL (suffix“T4”) (SUFFIX “T4”) DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed INTERNAL SCHEMATIC DIAGRAM an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix “S” identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS GAS DISCHARGE LAMP STATIC RELAYS MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuos) at Tc=25°C 6 A

5.1. stgb35n35lz_stgp35n35lz.pdf Size:741K _st

STGB35N35LZ STGP35N35LZ EAS 450 mJ, 345 V, internally clamped IGBT Features TAB ¦ Low threshold voltage TAB ¦ Low on-voltage drop ¦ High voltage clamping feature 3 1 ¦ Gate and gate-emitter integrated resistors TAB D?PAK 3 2 1 I?PAK Application ¦ Automotive ignition 3 2 1 TO-220 Description This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate- Figure 1. Internal schematic diagram emitter provide overvoltage protection capabilities. The device also exhibits low on-state C (2 or TAB) voltage drop and low threshold drive for use in automotive ignition system. RG G (1) RGE E (3) SC30180 Table 1. Device summary Order codes Marking Package Packaging STGB35N35LZ-1 GB35N35LZ I?PAK Tube STGB35N35LZT4 GB35N35LZ D?PAK Tape and reel STGP35N35LZ GP35N35LZ TO-220 Tube June 2010 Doc ID 12253 Rev 5 1/17 www.st.com 17 Contents STGB35N35LZ, STGP35N35LZ Contents 1 Elec

5.2. stgb30nc60k_stgp30nc60k.pdf Size:388K _st

STGB30NC60K STGP30NC60K 30 A - 600 V - short circuit rugged IGBT Features ¦ Low on-voltage drop (VCE(sat)) ¦ Low Cres / Cies ratio (no cross conduction susceptibility) ¦ Short circuit withstand time 10 µs 3 3 2 Applications 1 1 D?PAK TO-220 ¦ High frequency inverters ¦ Motor drivers Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off Figure 1. Internal schematic diagram between switching performance and low on-state behavior. Table 1. Device summary Order codes Marking Package Packaging STGB30NC60KT4 GB30NC60K D?PAK Tape and reel STGP30NC60K GP30NC60K TO-220 Tube March 2008 Rev 2 1/15 www.st.com 15 Contents STGB30NC60K - STGP30NC60K Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . .

See also transistors datasheet: STGB19NC60KD , STGB19NC60S , STGB19NC60W , STGB20NB41LZ , STGB20NC60V , STGB30NC60K , STGB35N35LZ , STGB3NB60SD , IXDH30N120AU1 , STGB6NC60HD , STGB7NC60HD , STGB8NC60K , STGB8NC60KD , STGBL6NC60D , STGBL6NC60DI , STGD10HF60KD , STGD10NC60H .

Keywords