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STGBL6NC60D
IGBT Transistor Datasheet. Parameters and Characteristics. Type Designator: STGBL6NC60D
Type of IGBT channel: N-Channel
Maximum power dissipation (Pc) of IGBT transistor, W: 56W
Maximum collector-emitter voltage |Uce|, V: 600V
Collector-emitter saturation voltage |Ucesat|, V: 2V
Maximum gate-emitter voltage |Ueg|, V:
Maximum collector current |Ic|, A: 3A
Maximum junction temperature (Tj), °C:
Rise time, nS:
Maximum collector capacity (Cc), pF:
Package: D2PAK
Equivalent transistors for STGBL6NC60D
STGBL6NC60D
PDF document for downloads:
1.1. stgbl6nc60d_stgdl6nc60d_stgpl6nc60d_stgfl6nc60d.pdf Size:533K _st |
| STGBL6NC60D - STGDL6NC60D
STGFL6NC60D - STGPL6NC60D
600 V - 6 A hyper fast IGBT
Features
¦ Low CRES / CIES ratio (no cross-conduction
susceptibility)
3
¦ Very soft ultra fast recovery antiparallel diode
3
2
2
1
1
TO-220FP TO-220
Applications
¦ Very high frequency operation
¦ High frequency lamp ballast
3
3
¦ SMPS and PFC (hard switching too)
1
1
DPAK
D?PAK
Description
Based on PowerMESH technology and thanks to
a new lifetime control system, this new series
Figure 1. Internal schematic diagram
exhibits very low turn-off energy realizing the best
trade-off between on-state voltage and switching
losses and so allowing very high operating
frequencies.
Table 1. Device summary
Order codes Marking Package Packaging
STGBL6NC60DT4 GBL6NC60D D?PAK Tape and reel
STGDL6NC60DT4 GDL6NC60D DPAK Tape and reel
STGPL6NC60D GPL6NC60D TO-220 Tube
STGFL6NC60D GFL6NC60D TO-220FP Tube
November 2008 Rev 3 1/19
www.st.com 19
Contents STGBL6NC60D - STGDL6NC60D - S |
1.2. stgbl6nc60di_stgdl6nc60di_stgpl6nc60di_stgfl6nc60di.pdf Size:641K _st |
| STGBL6NC60DI, STGDL6NC60DI
STGFL6NC60DI, STGPL6NC60DI
6 A, 600 V hyper fast IGBT
Features
¦ Low CRES / CIES ratio (no cross-conduction
susceptibility)
3
¦ Very high frequency operation
3
2
2
1
1
¦ Very soft ultrafast recovery antiparallel diode
TO-220FP TO-220
Applications
¦ High frequency inverters
3
3
¦ SMPS and PFC (hard switching too)
1
1
¦ High frequency motor drive DPAK
D?PAK
Description
Thanks to a new lifetime control system, this new
Figure 1. Internal schematic diagram
PowerMESH™ technology-based series of
devices exhibits very low turn-off energy,
representing the best trade-off between on-state
voltage and switching losses and thus allowing
very high operating frequencies.
Table 1. Device summary
Order codes Marking Package Packaging
STGBL6NC60DIT4 GBL6NC60DI D?PAK Tape and reel
STGDL6NC60DIT4 GDL6NC60DI DPAK Tape and reel
STGPL6NC60DI GPL6NC60DI TO-220 Tube
STGFL6NC60DI GFL6NC60DI TO-220FP Tube
August 2009 Doc ID 15536 Rev 2 1/18 |
See also transistors datasheet: STGB30NC60K
, STGB35N35LZ
, STGB3NB60SD
, STGB3NC120HD
, STGB6NC60HD
, STGB7NC60HD
, STGB8NC60K
, STGB8NC60KD
, 1MB20D-060
, STGBL6NC60DI
, STGD10HF60KD
, STGD10NC60H
, STGD10NC60HD
, STGD10NC60KD
, STGD10NC60S
, STGD10NC60SD
, STGD14NC60K
. Keywords| STGBL6NC60D
Datasheet | STGBL6NC60D
Datenblatt | STGBL6NC60D
RoHS | STGBL6NC60D
Distributor | | STGBL6NC60D
Application Notes | STGBL6NC60D
Component | STGBL6NC60D
Circuit | STGBL6NC60D
Schematic | | STGBL6NC60D
Equivalent | STGBL6NC60D
Cross Reference | STGBL6NC60D
Data Sheet | STGBL6NC60D
Fiche Technique |
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