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10N40E1D IGBT (IC) Datasheet. Cross Reference Search. 10N40E1D Equivalent

Type Designator: 10N40E1D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75W

Maximum Collector-Emitter Voltage |Vce|, V: 400V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 10A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 50

Maximum Collector Capacity (Cc), pF:

Package: TO220

10N40E1D Transistor Equivalent Substitute - IGBT Cross-Reference Search

10N40E1D PDF doc:

1.1. hgtp10n40c1d_hgtp10n40e1d_hgtp10n50c1d_hgtp10n50e1d.pdf Size:47K _harris_semi

10N40E1D
10N40E1D

HGTP10N40C1D, HGTP10N40E1D, S E M I C O N D U C T O R HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB • 10A, 400V and 500V • VCE(ON): 2.5V Max. EMITTER COLLECTOR • TFALL: 1µs, 0.5µs GATE • Low On-State Voltage COLLECTOR • Fast Switching Speeds (FLANGE) • High Input Impedance • Anti-Paral

4.1. mtb10n40e.pdf Size:234K _motorola

10N40E1D
10N40E1D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB10N40E/D Designer's? Data Sheet MTB10N40E TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N–Channel Enhancement–Mode Silicon Gate 10 AMPERES 400 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.55 OHM than any existing surface mount packag

4.2. mtb10n40erev0x.pdf Size:273K _motorola

10N40E1D
10N40E1D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB10N40E/D Designer's? Data Sheet MTB10N40E TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N–Channel Enhancement–Mode Silicon Gate 10 AMPERES 400 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.55 OHM than any existing surface mount packag

4.3. mtp10n40e.pdf Size:212K _motorola

10N40E1D
10N40E1D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N40E/D Designer's? Data Sheet MTP10N40E TMOS E-FET.? High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E–FET is designed to 10 AMPERES withstand high energy in the avalanche mode and switch efficiently. 400 VOLTS This new high energy device also offers a drain–

4.4. mtp10n40erev0x.pdf Size:249K _motorola

10N40E1D
10N40E1D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N40E/D Designer's? Data Sheet MTP10N40E TMOS E-FET.? High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E–FET is designed to 10 AMPERES withstand high energy in the avalanche mode and switch efficiently. 400 VOLTS This new high energy device also offers a drain–

4.5. mtn10n40e3.pdf Size:236K _cystek

10N40E1D
10N40E1D

Spec. No. : C586E3 Issued Date : 2011.04.18 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 400V RDS(ON) : 0.47Ω(typ.) MTN10N40E3 ID : 10A Description The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

See also transistors datasheet: 10N40C1D , 10N40E1D , 10N40F1D , 10N50C1D , 10N50E1D , 10N50F1D , 12N60C3D , 14N36GVL , IKW50N60H3 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .

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