GT15J103 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: GT15J103

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 70W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 4V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 15A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 350

Maximum collector capacity (Cc), pF:

Package: DPAK

Equivalent transistors for GT15J103

GT15J103 PDF document for downloads:

5.1. gt15j301_en_wm_20061031.pdf Size:512K _toshiba

GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 HIGH POWER SWITCHING APPLICATIONS Unit: mm MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30?s (Max.) (IC = 15A) Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 15A) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate-Emitter Voltage VGES ±20 V DC IC 15 A Collector Current 1ms ICP 30 A DC IF 15 A Emitter-Collector Forward JEDEC ? Current 1ms IFM 30 A JEITA ? Collector Power Dissipation PC 35 W (Tc = 25°C) TOSHIBA 2-10R1C Junction Temperature Tj 150 °C Weight: 1.7 g (typ.) Storage Temperature Range Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decr

5.2. gt15j321_en_wm_20061031.pdf Size:214K _toshiba

GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Unit: mm Fast Switching Applications • Fourth-generation IGBT • Fast switching (FS • Enhancement mode type • High speed: tf = 0.03 ?s (typ.) • Low saturation Voltage: VCE (sat) = 1.90 V (typ.) • FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 15 Collector current A 1 ms ICP 30 JEDEC ? DC IF 15 Emitter-collector forward A current 1 ms IFM 30 JEITA ? Collector power dissipation TOSHIBA 2-10R1C PC 30 W (Tc = 25°C) Weight: 1.7 g Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrea

See also transistors datasheet: GT10G101 , GT10J301 , GT10J311 , GT10Q301 , GT10Q311 , GT15G101 , GT15J101 , GT15J102 , G20N60B3D , GT15N101 , GT15Q101 , GT15Q301 , GT15Q311 , GT20D101 , GT20D101O , GT20D101Y , GT20G101 .

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