IGBT Datasheet



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STGW20NC60VD
  STGW20NC60VD
  STGW20NC60VD
  STGW20NC60VD
 
STGW20NC60VD
  STGW20NC60VD
  STGW20NC60VD
  STGW20NC60VD
 
 
List
10N40C1D ..APT15GP90K
APT15GT60BR ..FGA30N120FTD
FGA30N60LSD ..GT10J311
GT10J321 ..HGT1S12N60C3
HGT1S12N60C3D ..HGTG30N60A4
HGTG30N60A4D ..IGW30N100T
IGW30N60H3 ..IRG4BC20U
IRG4BC20UD ..IRG6B330UD
IRG6I320U ..IRGSL4062D
IRGSL4B60KD1 ..IXGA12N60CD1
IXGA14N120B ..IXGH24N50BU1
IXGH24N60B ..IXGH50N60C4D1
IXGH50N90B2 ..IXGP16N60C2
IXGP16N60C2D1 ..IXGT24N170
IXGT24N170A ..IXSA10N60B2D1
IXSA12N60AU1 ..IXXH100N60C3
IXXH30N60B3D1 ..MIEB101H1200EH
MIEB101W1200EH ..MSAHX75L60C
MSAHX75L60D ..RCM10N40A
RCP10N35 ..SGF80N60UF
SGF80N60UFD ..SKD75GAL123D
SKM100GAL123D ..SKW15N120
SKW15N60 ..STGD10NC60S
STGD10NC60SD ..STGWF30NC60S
STGWT38IH130D ..VWI35-06P1
 
STGW20NC60VD All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

STGW20NC60VD IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: STGW20NC60VD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 200W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.7V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 20A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for STGW20NC60VD - Cross-Reference Search

STGW20NC60VD PDF doc:

1.1. stgb20nc60v_stgp20nc60v_stgw20nc60v.pdf Size:405K _st

STGW20NC60VD
STGW20NC60VD
STGB20NC60V - STGP20NC60V STGW20NC60V 30 A - 600 V - very fast IGBT Features ¦ High frequency operation up to 50 kHz ¦ Lower CRES / CIES ratio (no cross-conduction susceptibility) 3 ¦ High current capability 3 2 2 1 1 Applications TO-247 TO-220 3 1 ¦ High frequency inverters ¦ UPS, motor drivers D?PAK ¦ HF, SMPS and PFC in both hard switch and resonant topologies Description Figure 1. Internal schematic diagram This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Device summary Order codes Marking Package Packaging STGB20NC60VT4 GB20NC60V D?PAK Tape and reel STGP20NC60V GP20NC60V TO-220 Tube STGW20NC60V GW20NC60V TO-247 Tube May 2008 Rev 5 1/16 www.st.com 16 Contents STGB20NC60V - STGP20NC60V - STGW20NC60V Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical character

1.2. stgw20nc60vd.pdf Size:342K _st

STGW20NC60VD
STGW20NC60VD
STGW20NC60VD 30 A, 600 V, very fast IGBT Features ¦ High current capability ¦ High frequency operation up to 50 KHz ¦ Very soft ultra fast recovery antiparallel diode Description 3 2 This IGBT utilizes the advanced Power MESH™ 1 process resulting in an excellent trade-off between switching performance and low on-state TO-247 behavior. Applications ¦ High frequency inverters, UPS Figure 1. Internal schematic diagram ¦ Motor drive ¦ SMPS and PFC in both hard switch and resonant topologies Table 1. Device summary Order code Marking Package Packaging STGW20NC60VD GW20NC60VD TO-247 Tube March 2010 Doc ID 9983 Rev 5 1/14 www.st.com 14 Contents STGW20NC60VD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . .

3.1. stgw20nb60h.pdf Size:294K _st

STGW20NC60VD
STGW20NC60VD
STGW20NB60H ® N-CHANNEL 20A - 600V TO-247 PowerMESH? IGBT TYPE VCES VCE(sat) IC STGW20NB60H 600 V < 2.8 V 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (V ) CESAT LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 VERY HIGH FREQUENCY OPERATION 2 1 OFF LOSSES INCLUDE TAIL CURRENT DESCRIPTION Using the latest high voltage technology based TO-247 on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS WELDING EQUIPMENTS SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Curren

3.2. stgw20nb60hd.pdf Size:90K _st

STGW20NC60VD
STGW20NC60VD
STGW20NB60HD ? N-CHANNEL 20A - 600V TO-247 PowerMESH? IGBT TYPE VCES VCE(sat) IC STGW20NB60HD 600 V < 2.8 V 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (V ) CESAT LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 VERY HIGH FREQUENCY OPERATION 2 1 OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH? ANTIPARALLEL DIODE TO-247 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding ? perfomances. The suffix ”H” identifies a family INTERNAL SCHEMATIC DIAGRAM optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS WELDING EQUIPMENTS SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VGE Gate-Emitter Voltage ± 20 V o

3.3. stgw20nb60kd.pdf Size:312K _st

STGW20NC60VD
STGW20NC60VD
STGW20NB60KD N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGW20NB60KD 600 V < 2.8 V 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW ON-LOSSES LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 OFF LOSSES INCLUDE TAIL CURRENT TO-247 VERY HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED LATCH CURRENT FREE OPERATION DESCRIPTION INTERNAL SCHEMATIC DIAGRAM Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS U.P.S. WELDING EQUIPMENTS ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGW20NB60KD GW20NB60KD TO-247 TUBE August 2003 1/8 STGW20NB60KD ABSOLUTE MAXIMUM RATI

See also transistors datasheet: STGP8NC60KD , STGPL6NC60D , STGPL6NC60DI , STGW19NC60H , STGW19NC60HD , STGW19NC60W , STGW19NC60WD , STGW20NC60V , GT60M301 , STGW25H120DF , STGW30N120KD , STGW30N90D , STGW30NC120HD , STGW30NC60KD , STGW30NC60VD , STGW30NC60WD , STGW35HF60W .

Keywords

 STGW20NC60VD Datasheet  STGW20NC60VD Datenblatt  STGW20NC60VD RoHS  STGW20NC60VD Distributor
 STGW20NC60VD Application Notes  STGW20NC60VD Component  STGW20NC60VD Circuit  STGW20NC60VD Schematic
 STGW20NC60VD Equivalent  STGW20NC60VD Cross Reference  STGW20NC60VD Data Sheet  STGW20NC60VD Fiche Technique

 

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