IGBT Datasheet



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STGW20NC60VD
  STGW20NC60VD
  STGW20NC60VD
  STGW20NC60VD
 
STGW20NC60VD
  STGW20NC60VD
  STGW20NC60VD
  STGW20NC60VD
 
 
List
10N40C1D ..APT15GP90K
APT15GT60BR ..APT60GT60BR
APT60GT60JR ..APTGF90TDU60P
APTGF90X60E3 ..AUIRGS14C40L
AUIRGS30B60K ..G12N60C3D
G12N60D1 ..GT50M101
GT50Q101 ..HGTD3N60B3S
HGTD3N60C3 ..HGTP3N60B3D
HGTP3N60C3 ..IKU15N60R
IKW03N120H2 ..IRG4PC50U
IRG4PC50UD ..IRGP30B120KD-E
IRGP30B60KD-E ..IXBX64N250
IXBX75N170 ..IXGH12N100A
IXGH12N100AU1 ..IXGH36N60B3
IXGH36N60B3C1 ..IXGM17N100
IXGM17N100A ..IXGR48N60C3D1
IXGR50N160H1 ..IXGX100N170
IXGX120N120A3 ..IXSN55N120A
IXSN55N120AU1 ..MGP15N43CL
MGP15N60U ..MIXA40W1200TML
MIXA40W1200TML ..MWI50-12E6K
MWI50-12E7 ..RJP30E2DPP-M0
RJP30E3DPP-M0 ..SGR6N60UF
SGS10N60RUF ..SKM400GA062D
SKM400GA123D ..SNG201025
SNG20620A ..STGPL6NC60D
STGPL6NC60DI ..VWI35-06P1
 
STGW20NC60VD All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

STGW20NC60VD IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: STGW20NC60VD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 200W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.7V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 20A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for STGW20NC60VD - Cross-Reference Search

STGW20NC60VD PDF doc:

1.1. stgb20nc60v_stgp20nc60v_stgw20nc60v.pdf Size:405K _st

STGW20NC60VD
STGW20NC60VD
STGB20NC60V - STGP20NC60V STGW20NC60V 30 A - 600 V - very fast IGBT Features ¦ High frequency operation up to 50 kHz ¦ Lower CRES / CIES ratio (no cross-conduction susceptibility) 3 ¦ High current capability 3 2 2 1 1 Applications TO-247 TO-220 3 1 ¦ High frequency inverters ¦ UPS, motor drivers D?PAK ¦ HF, SMPS and PFC in both hard switch and resonant topologies Description Figure 1. Internal schematic diagram This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Device summary Order codes Marking Package Packaging STGB20NC60VT4 GB20NC60V D?PAK Tape and reel STGP20NC60V GP20NC60V TO-220 Tube STGW20NC60V GW20NC60V TO-247 Tube May 2008 Rev 5 1/16 www.st.com 16 Contents STGB20NC60V - STGP20NC60V - STGW20NC60V Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical character

1.2. stgw20nc60vd.pdf Size:342K _st

STGW20NC60VD
STGW20NC60VD
STGW20NC60VD 30 A, 600 V, very fast IGBT Features ¦ High current capability ¦ High frequency operation up to 50 KHz ¦ Very soft ultra fast recovery antiparallel diode Description 3 2 This IGBT utilizes the advanced Power MESH™ 1 process resulting in an excellent trade-off between switching performance and low on-state TO-247 behavior. Applications ¦ High frequency inverters, UPS Figure 1. Internal schematic diagram ¦ Motor drive ¦ SMPS and PFC in both hard switch and resonant topologies Table 1. Device summary Order code Marking Package Packaging STGW20NC60VD GW20NC60VD TO-247 Tube March 2010 Doc ID 9983 Rev 5 1/14 www.st.com 14 Contents STGW20NC60VD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . .

3.1. stgw20nb60h.pdf Size:294K _st

STGW20NC60VD
STGW20NC60VD
STGW20NB60H ® N-CHANNEL 20A - 600V TO-247 PowerMESH? IGBT TYPE VCES VCE(sat) IC STGW20NB60H 600 V < 2.8 V 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (V ) CESAT LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 VERY HIGH FREQUENCY OPERATION 2 1 OFF LOSSES INCLUDE TAIL CURRENT DESCRIPTION Using the latest high voltage technology based TO-247 on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS WELDING EQUIPMENTS SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Curren

3.2. stgw20nb60hd.pdf Size:90K _st

STGW20NC60VD
STGW20NC60VD
STGW20NB60HD ? N-CHANNEL 20A - 600V TO-247 PowerMESH? IGBT TYPE VCES VCE(sat) IC STGW20NB60HD 600 V < 2.8 V 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (V ) CESAT LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 VERY HIGH FREQUENCY OPERATION 2 1 OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH? ANTIPARALLEL DIODE TO-247 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding ? perfomances. The suffix ”H” identifies a family INTERNAL SCHEMATIC DIAGRAM optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS WELDING EQUIPMENTS SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VGE Gate-Emitter Voltage ± 20 V o

3.3. stgw20nb60kd.pdf Size:312K _st

STGW20NC60VD
STGW20NC60VD
STGW20NB60KD N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGW20NB60KD 600 V < 2.8 V 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW ON-LOSSES LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 OFF LOSSES INCLUDE TAIL CURRENT TO-247 VERY HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED LATCH CURRENT FREE OPERATION DESCRIPTION INTERNAL SCHEMATIC DIAGRAM Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS U.P.S. WELDING EQUIPMENTS ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGW20NB60KD GW20NB60KD TO-247 TUBE August 2003 1/8 STGW20NB60KD ABSOLUTE MAXIMUM RATI

See also transistors datasheet: STGP8NC60KD , STGPL6NC60D , STGPL6NC60DI , STGW19NC60H , STGW19NC60HD , STGW19NC60W , STGW19NC60WD , STGW20NC60V , GT60M301 , STGW25H120DF , STGW30N120KD , STGW30N90D , STGW30NC120HD , STGW30NC60KD , STGW30NC60VD , STGW30NC60WD , STGW35HF60W .

Keywords

 STGW20NC60VD Datasheet  STGW20NC60VD Datenblatt  STGW20NC60VD RoHS  STGW20NC60VD Distributor
 STGW20NC60VD Application Notes  STGW20NC60VD Component  STGW20NC60VD Circuit  STGW20NC60VD Schematic
 STGW20NC60VD Equivalent  STGW20NC60VD Cross Reference  STGW20NC60VD Data Sheet  STGW20NC60VD Fiche Technique

 

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