IGBT Datasheet



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STGW20NC60VD
  STGW20NC60VD
  STGW20NC60VD
  STGW20NC60VD
 
STGW20NC60VD
  STGW20NC60VD
  STGW20NC60VD
  STGW20NC60VD
 
 
List
10N40C1D ..APT15GP90K
APT15GT60BR ..APT60GT60BR
APT60GT60JR ..AUIRGP4063D
AUIRGP4066D1 ..G12N40E1D
G12N50C1 ..GT50J322
GT50J325 ..HGTD1N120CNS
HGTD2N120BNS ..HGTP2N120CN
HGTP2N120CND ..IKP20N60H3
IKP20N60T ..IRG4PC50FD
IRG4PC50K ..IRGIB6B60KD
IRGIB7B60KD ..IXBT42N170
IXBT42N170A ..IXGH10N170A
IXGH10N300 ..IXGH34N60B2
IXGH35N120B ..IXGK80N60AU1
IXGK82N120A3 ..IXGR40N60C2
IXGR40N60C2D1 ..IXGT6N170
IXGT6N170A ..IXSN35N100U1
IXSN35N120AU1 ..MGP11N60ED
MGP14N60E ..MIXA30WB1200TED
MIXA40W1200TED ..MWI451-17E9
MWI50-06A7 ..RJH60M3DPQ-A0
RJH60M5DPQ-A0 ..SGP6N60UFD
SGR15N40L ..SKM300GAY123D
SKM300GB063D ..SME6G25US120
SME6G30US60 ..STGP7NB60HDFP
STGP7NC60H ..VWI35-06P1
 
STGW20NC60VD All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

STGW20NC60VD IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: STGW20NC60VD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 200W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.7V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 20A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for STGW20NC60VD - Cross-Reference Search

STGW20NC60VD PDF doc:

1.1. stgb20nc60v_stgp20nc60v_stgw20nc60v.pdf Size:405K _st

STGW20NC60VD
STGW20NC60VD
STGB20NC60V - STGP20NC60V STGW20NC60V 30 A - 600 V - very fast IGBT Features ¦ High frequency operation up to 50 kHz ¦ Lower CRES / CIES ratio (no cross-conduction susceptibility) 3 ¦ High current capability 3 2 2 1 1 Applications TO-247 TO-220 3 1 ¦ High frequency inverters ¦ UPS, motor drivers D?PAK ¦ HF, SMPS and PFC in both hard switch and resonant topologies Description Figure 1. Internal schematic diagram This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Device summary Order codes Marking Package Packaging STGB20NC60VT4 GB20NC60V D?PAK Tape and reel STGP20NC60V GP20NC60V TO-220 Tube STGW20NC60V GW20NC60V TO-247 Tube May 2008 Rev 5 1/16 www.st.com 16 Contents STGB20NC60V - STGP20NC60V - STGW20NC60V Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical character

1.2. stgw20nc60vd.pdf Size:342K _st

STGW20NC60VD
STGW20NC60VD
STGW20NC60VD 30 A, 600 V, very fast IGBT Features ¦ High current capability ¦ High frequency operation up to 50 KHz ¦ Very soft ultra fast recovery antiparallel diode Description 3 2 This IGBT utilizes the advanced Power MESH™ 1 process resulting in an excellent trade-off between switching performance and low on-state TO-247 behavior. Applications ¦ High frequency inverters, UPS Figure 1. Internal schematic diagram ¦ Motor drive ¦ SMPS and PFC in both hard switch and resonant topologies Table 1. Device summary Order code Marking Package Packaging STGW20NC60VD GW20NC60VD TO-247 Tube March 2010 Doc ID 9983 Rev 5 1/14 www.st.com 14 Contents STGW20NC60VD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . .

3.1. stgw20nb60h.pdf Size:294K _st

STGW20NC60VD
STGW20NC60VD
STGW20NB60H ® N-CHANNEL 20A - 600V TO-247 PowerMESH? IGBT TYPE VCES VCE(sat) IC STGW20NB60H 600 V < 2.8 V 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (V ) CESAT LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 VERY HIGH FREQUENCY OPERATION 2 1 OFF LOSSES INCLUDE TAIL CURRENT DESCRIPTION Using the latest high voltage technology based TO-247 on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS WELDING EQUIPMENTS SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Curren

3.2. stgw20nb60hd.pdf Size:90K _st

STGW20NC60VD
STGW20NC60VD
STGW20NB60HD ? N-CHANNEL 20A - 600V TO-247 PowerMESH? IGBT TYPE VCES VCE(sat) IC STGW20NB60HD 600 V < 2.8 V 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (V ) CESAT LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 VERY HIGH FREQUENCY OPERATION 2 1 OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH? ANTIPARALLEL DIODE TO-247 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding ? perfomances. The suffix ”H” identifies a family INTERNAL SCHEMATIC DIAGRAM optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS WELDING EQUIPMENTS SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VGE Gate-Emitter Voltage ± 20 V o

3.3. stgw20nb60kd.pdf Size:312K _st

STGW20NC60VD
STGW20NC60VD
STGW20NB60KD N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGW20NB60KD 600 V < 2.8 V 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW ON-LOSSES LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 OFF LOSSES INCLUDE TAIL CURRENT TO-247 VERY HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED LATCH CURRENT FREE OPERATION DESCRIPTION INTERNAL SCHEMATIC DIAGRAM Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS U.P.S. WELDING EQUIPMENTS ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGW20NB60KD GW20NB60KD TO-247 TUBE August 2003 1/8 STGW20NB60KD ABSOLUTE MAXIMUM RATI

See also transistors datasheet: STGP8NC60KD , STGPL6NC60D , STGPL6NC60DI , STGW19NC60H , STGW19NC60HD , STGW19NC60W , STGW19NC60WD , STGW20NC60V , GT60M301 , STGW25H120DF , STGW30N120KD , STGW30N90D , STGW30NC120HD , STGW30NC60KD , STGW30NC60VD , STGW30NC60WD , STGW35HF60W .

Keywords

 STGW20NC60VD Datasheet  STGW20NC60VD Datenblatt  STGW20NC60VD RoHS  STGW20NC60VD Distributor
 STGW20NC60VD Application Notes  STGW20NC60VD Component  STGW20NC60VD Circuit  STGW20NC60VD Schematic
 STGW20NC60VD Equivalent  STGW20NC60VD Cross Reference  STGW20NC60VD Data Sheet  STGW20NC60VD Fiche Technique

 

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