GT15Q101 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: GT15Q101

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 150W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 4V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 15A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 500

Maximum collector capacity (Cc), pF:

Package: TOP3

Equivalent transistors for GT15Q101

GT15Q101 PDF document for downloads:

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See also transistors datasheet: GT10J311 , GT10Q301 , GT10Q311 , GT15G101 , GT15J101 , GT15J102 , GT15J103 , GT15N101 , 10N40F1D , GT15Q301 , GT15Q311 , GT20D101 , GT20D101O , GT20D101Y , GT20G101 , GT20G102 , GT20J301 .

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