IGBT Datasheet



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GT15Q101
  GT15Q101
  GT15Q101
  GT15Q101
 
GT15Q101
  GT15Q101
  GT15Q101
  GT15Q101
 
 
List
10N40C1D ..APT15GP90K
APT15GT60BR ..AUIRGS30B60K
AUIRGS4056D ..G12N60D1
G20N120E2 ..GT50Q101
GT50S101 ..HGTD3N60C3
HGTD3N60C3S ..HGTP3N60C3
HGTP3N60C3D ..IKW03N120H2
IKW08T120 ..IRG4PC50UD
IRG4PC50W ..IRGP30B60KD-E
IRGP35B60PD ..IXBX75N170
IXBX75N170A ..IXGH12N100AU1
IXGH12N100U1 ..IXGH36N60B3C1
IXGH36N60B3D1 ..IXGM17N100A
IXGM25N100 ..IXGR50N160H1
IXGR50N60A2U1 ..IXGX120N120A3
IXGX120N120B3 ..IXSN55N120AU1
IXSN62N60U1 ..MGP15N60U
MGP20N14CL ..MIXA40W1200TML
MIXA40WB1200TED ..MWI50-12E7
MWI50-12T7T ..RJP30E3DPP-M0
RJP30H1DPD ..SGS10N60RUF
SGS10N60RUFD ..SKM400GA123D
SKM400GA124D ..SNG20620A
SNG301010 ..STGPL6NC60DI
STGW12NB60H ..VWI35-06P1
 
GT15Q101 All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

GT15Q101 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: GT15Q101

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 150W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 4V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 15A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 500

Maximum collector capacity (Cc), pF:

Package: TOP3

Equivalent transistors for GT15Q101 - Cross-Reference Search

GT15Q101 PDF doc:

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See also transistors datasheet: GT10J311 , GT10Q301 , GT10Q311 , GT15G101 , GT15J101 , GT15J102 , GT15J103 , GT15N101 , IXGR40N60C2D1 , GT15Q301 , GT15Q311 , GT20D101 , GT20D101O , GT20D101Y , GT20G101 , GT20G102 , GT20J301 .

Keywords

 GT15Q101 Datasheet  GT15Q101 Datenblatt  GT15Q101 RoHS  GT15Q101 Distributor
 GT15Q101 Application Notes  GT15Q101 Component  GT15Q101 Circuit  GT15Q101 Schematic
 GT15Q101 Equivalent  GT15Q101 Cross Reference  GT15Q101 Data Sheet  GT15Q101 Fiche Technique

 

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