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STGW39NC60VD IGBT. Datasheet pdf. Equivalent

Type Designator: STGW39NC60VD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 250W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.7V

Maximum Collector Current |Ic|, A: 30A

Package: TO247

STGW39NC60VD Transistor Equivalent Substitute - IGBT Cross-Reference Search

STGW39NC60VD PDF doc:

1.1. stgw39nc60vd.pdf Size:425K _st

STGW39NC60VD
STGW39NC60VD

STGW39NC60VD 40 A - 600 V - very fast IGBT Features Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode 3 Applications 2 1 High frequency inverters TO-247 UPS Motor drivers Induction heating Description Figure 1. Internal schematic diagram This IGBT utilizes the advanced PowerMESH process resulting in an

1.2. stgw39nc60vd.pdf Size:421K _igbt

STGW39NC60VD
STGW39NC60VD

STGW39NC60VD 40 A - 600 V - very fast IGBT Features ■ Low CRES / CIES ratio (no cross conduction susceptibility) ■ IGBT co-packaged with ultra fast free-wheeling diode 3 Applications 2 1 ■ High frequency inverters TO-247 ■ UPS ■ Motor drivers ■ Induction heating Description Figure 1. Internal schematic diagram This IGBT utilizes the advanced PowerMESH™ proces

5.1. stgw35nc120hd.pdf Size:496K _st

STGW39NC60VD
STGW39NC60VD

STGW35NC120HD 32 A - 1200 V - very fast IGBT Features Low on-losses Low on-voltage drop (VCE(sat)) High current capability High input impedance (voltage driven) Low gate charge 3 2 Ideal for soft switching application 1 TO-247 long leads Application Induction heating High frequency inverters UPS Figure 1. Internal schematic diagram Description This IGBT utilize

5.2. stgw30nc60wd.pdf Size:542K _st

STGW39NC60VD
STGW39NC60VD

STGW30NC60WD 30 A, 600 V ultra fast IGBT Features High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Applications 3 2 1 High frequency motor controls, inverters, UPS TO-247 HF, SMPS and PFC in both hard switch and resonant topologies Description This IGBT utilizes the advanced Power MES

5.3. stgw30nb60h.pdf Size:300K _st

STGW39NC60VD
STGW39NC60VD

STGW30NB60H N-CHANNEL 30A - 600V TO-247 PowerMESH? IGBT TYPE VCES VCE(sat) IC STGW30NB60H 600 V < 2.8 V 30 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (V ) CESAT LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 VERY HIGH FREQUENCY OPERATION 2 1 OFF LOSSES INCLUDE TAIL CURRENT DESCRIPTION Using the latest high voltage technology based TO-247 on a patented strip

5.4. stgw30nc60vd.pdf Size:335K _st

STGW39NC60VD
STGW39NC60VD

STGW30NC60VD 40 A, 600 V, very fast IGBT Features High current capability High frequency operation up to 50 KHz Very soft ultra fast recovery antiparallel diode Description 3 2 This IGBT utilizes the advanced Power MESH 1 process resulting in an excellent trade-off between switching performance and low on-state TO-247 long leads behavior. Applications High frequency inv

5.5. stgw30nc60kd.pdf Size:351K _st

STGW39NC60VD
STGW39NC60VD

STGW30NC60KD 30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s IGBT co-packaged with ultra fast free-wheeling diode 3 2 1 Applications TO-247 High frequency inverters Motor drivers Description Figure 1. Internal schematic diagram This IGBT uti

5.6. stgw38ih130d.pdf Size:694K _st

STGW39NC60VD
STGW39NC60VD

STGW38IH130D 33 A - 1300 V - very fast IGBT Features Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop free- wheeling diode 3 2 1 Applications TO-247 Induction cooking, microwave oven Soft switching application Description This IGBT utilizes the advanced PowerMESH Figure 1. Internal schematic diagram process

5.7. stgw30n90d.pdf Size:575K _st

STGW39NC60VD
STGW39NC60VD

STGW30N90D 30 A, 900 V very fast IGBT Features Low on-losses Low on-voltage drop (VCE(sat)) High current capability Low gate charge Ideal for soft switching application 3 2 1 Application TO-247 Induction heating Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off Figure 1. Internal schematic diagram between switching pe

5.8. stgw30nc120hd.pdf Size:308K _st

STGW39NC60VD
STGW39NC60VD

STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features IC VCE(sat) Type VCES @25C @100C STGW30NC120HD 1200V < 2.75V 30A Low on-losses 3 Low on-voltage drop (Vcesat) 2 1 High current capability TO-247 High input impedance (voltage driven) Low gate charge Ideal for soft switching application Application Figure 1. Internal schematic diagram

5.9. stgw30n120kd.pdf Size:386K _st

STGW39NC60VD
STGW39NC60VD

STGW30N120KD 30 A - 1200 V - short circuit rugged IGBT Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with ultra fast free-wheeling 3 diode 2 1 Application TO-247 Motor control Description This IGBT utilizes the advanced PowerMESH Figure 1. Internal schematic diagram process resulting in an excelle

5.10. stgw30nb60hd.pdf Size:328K _st

STGW39NC60VD
STGW39NC60VD

STGW30NB60HD N-CHANNEL 30A - 600V - TO-247 PowerMESH IGBT TYPE VCES VCE(sat) (Max) IC STGW30NB60HD 600 V < 2.8 V 30 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 VERY HIGH FREQUENCY OPERATION 2 1 OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TORBOSWITCH ANTIPARALLEL DIODE TO-247 DESCRIPTION INTERNAL SCHE

5.11. stgw35nb60sd.pdf Size:249K _st

STGW39NC60VD
STGW39NC60VD

STGW35NB60SD N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH IGBT General features VCE(sat) IC VCES Type (Max)@ 25C @100C STGW35NB60SD 600V < 1.7V 35A LOW ON-VOLTAGE DROP (VCEsat) 3 2 LOW INPUT CAPACITANCE 1 HIGH CURRENT CAPABILITY TO-247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has Internal schematic di

5.12. stgw35hf60w.pdf Size:384K _st

STGW39NC60VD
STGW39NC60VD

STGW35HF60W 35 A, 600 V ultra fast IGBT Preliminary data Features Improved Eoff at elevated temperature Minimal tail current Low conduction losses VCE(sat) classified for easy parallel connection 3 Applications 2 1 Welding TO-247 High frequency converters Power factor correction Description The STGW35HF60W is based on a new Figure 1. Internal schematic diagram adv

5.13. stgw35hf60wd.pdf Size:449K _st

STGW39NC60VD
STGW39NC60VD

STGW35HF60WD 35 A, 600 V ultra fast IGBT Features Improved Eoff at elevated temperature Minimal tail current Low conduction losses VCE(sat) classified for easy parallel connection Ultra fast soft recovery antiparallel diode 3 2 1 Applications TO-247 Welding High frequency converters Power factor correction Description Figure 1. Internal schematic diagram The STGW

5.14. stgw35hf60wdi.pdf Size:346K _st

STGW39NC60VD
STGW39NC60VD

STGW35HF60WDI 35 A, 600 V ultra fast IGBT Features Improved Eoff at elevated temperature Low CRES / CIES ratio (no cross-conduction susceptibility) Low VF soft recovery antiparallel diode Applications 3 2 1 Welding TO-247 Induction heating Resonant converters Description The "HF" series is based on a new planar Figure 1. Internal schematic diagram technology concep

5.15. stgw35nb60s.pdf Size:268K _st

STGW39NC60VD
STGW39NC60VD

STGW35NB60S N-channel 35A - 600V - TO-247 Low drop PowerMESH IGBT Features VCE(sat) IC Type VCES (Max)@ 25C @100C STGW35NB60S 600V < 1.7V 35A Low on-voltage drop (VCEsat) Low input capacitance High current capability TO-247 Description Internal schematic diagram Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an a

5.16. stgw30h60dfb.pdf Size:419K _igbt

STGW39NC60VD
STGW39NC60VD

STGW30H60DFB, STGWT30H60DFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 1.55 V (typ.) @ IC = 30 A 3 3 2 2 • Tight parameters distribution 1 1 TO-247 • Safe paralleling TO-3P • Low thermal resist

5.17. stgw35nc120hd.pdf Size:502K _igbt

STGW39NC60VD
STGW39NC60VD

STGW35NC120HD 32 A, 1200 V very fast IGBT Datasheet - production data Features • Low on-losses • Low on-voltage drop (VCE(sat)) • High current capability • IGBT co-packaged with ultrafast free-wheeling diode 3 • Low gate charge 2 1 • Ideal for soft switching application TO-247 long leads Application • Induction heating Figure 1. Internal schematic diagram •

5.18. stgw30v60f.pdf Size:1472K _igbt

STGW39NC60VD
STGW39NC60VD

STGFW30V60F, STGW30V60F, STGWT30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 1 1 • Tail-less switching off 3 • VCE(sat) = 1.85 V (typ.) @ IC = 30 A 2 1 TO-3PF • Tight parameters distribution Tab • Safe paralleling • Low thermal resistance 3 3 2 2 App

5.19. stgw30nc60wd.pdf Size:541K _igbt

STGW39NC60VD
STGW39NC60VD

STGW30NC60WD 30 A, 600 V ultra fast IGBT Features ■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode Applications 3 2 1 ■ High frequency motor controls, inverters, UPS TO-247 ■ HF, SMPS and PFC in both hard switch and resonant topologies Description This IGBT utilizes the advan

5.20. stgw30h60dlfb.pdf Size:1739K _igbt

STGW39NC60VD
STGW39NC60VD

STGB30H60DLFB, STGW30H60DLFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features • Designed for soft commutation only • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 3 1 3 • VCE(sat) = 1.55 V (typ.) @ IC = 30 A 2 D2PAK 1 • Low VF soft recovery co-packaged diode T

5.21. stgw30v60df.pdf Size:1905K _igbt

STGW39NC60VD
STGW39NC60VD

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB Features TAB • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 3 3 2 1 • VCE(sat) = 1.85 V (typ.) @ IC = 30 A 1 D²PAK TO-220 • Tight parameters distribution TAB • Safe paralleling • Low therma

5.22. stgw30nc60vd.pdf Size:350K _igbt

STGW39NC60VD
STGW39NC60VD

STGW30NC60VD 40 A, 600 V, very fast IGBT with Ultrafast diode Features ■ High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Applications 3 2 ■ High frequency inverters, UPS 1 ■ Motor drive TO-247 long leads ■ SMPS and PFC in both hard switch and resonant topologies Description Figure 1. Internal schemat

5.23. stgw30nc60kd.pdf Size:345K _igbt

STGW39NC60VD
STGW39NC60VD

STGW30NC60KD 30 A - 600 V - short circuit rugged IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling diode 3 2 1 Applications TO-247 ■ High frequency inverters ■ Motor drivers Description Figure 1. Internal schematic diagra

5.24. stgw30h60df.pdf Size:1945K _igbt

STGW39NC60VD
STGW39NC60VD

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB • High speed switching • Tight parameters distribution 3 1 3 • Safe paralleling 2 1 D²PAK • Low thermal resistance TO-220FP • Short circuit rated TAB • Ultrafast soft recovery antiparallel diode Applications 3 3 • I

5.25. stgw30h65fb.pdf Size:1635K _igbt

STGW39NC60VD
STGW39NC60VD

STGFW30H65FB, STGW30H65FB, STGWT30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed Datasheet - production data TAB Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 3 • Minimized tail current 2 1 • VCE(sat) = 1.55 V (typ.) @ IC = 30 A TO-3PF • Tight parameters distribution 1 1 1 • Safe paralleling 3 • Low t

5.26. stgw30nc120hd.pdf Size:302K _igbt

STGW39NC60VD
STGW39NC60VD

STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH™ IGBT Features IC VCE(sat) Type VCES @25°C @100°C STGW30NC120HD 1200V < 2.75V 30A ■ Low on-losses 3 ■ Low on-voltage drop (Vcesat) 2 1 ■ High current capability TO-247 ■ High input impedance (voltage driven) ■ Low gate charge ■ Ideal for soft switching application Application Figure 1. Internal

5.27. stgw30n120kd.pdf Size:419K _igbt

STGW39NC60VD
STGW39NC60VD

STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features ■ Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling 3 diode 2 1 Applications TO-247 ■ Motor control Description Figure 1. Internal schematic diagram This high voltage and short

5.28. stgw35nb60sd.pdf Size:244K _igbt

STGW39NC60VD
STGW39NC60VD

STGW35NB60SD N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH™ IGBT General features VCE(sat) IC VCES Type (Max)@ 25°C @100°C STGW35NB60SD 600V < 1.7V 35A ■ LOW ON-VOLTAGE DROP (VCEsat) 3 2 ■ LOW INPUT CAPACITANCE 1 ■ HIGH CURRENT CAPABILITY TO-247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has Internal

5.29. stgw35hf60w.pdf Size:633K _igbt

STGW39NC60VD
STGW39NC60VD

STGF35HF60W, STGW35HF60W, STGFW35HF60W 35 A, 600 V Ultrafast IGBT Datasheet - production data Features ■ Improved Eoff at elevated temperature ■ Minimal tail current ■ Low conduction losses 3 3 2 2 1 1 Applications TO-247 TO-220FP ■ Welding ■ High frequency converters 1 1 1 ■ Power factor correction 3 2 1 Description TO-3PF This Ultrafast IGBT is develope

5.30. stgw35hf60wd.pdf Size:447K _igbt

STGW39NC60VD
STGW39NC60VD

STGW35HF60WD 35 A, 600 V ultra fast IGBT Features ■ Improved Eoff at elevated temperature ■ Minimal tail current ■ Low conduction losses ■ VCE(sat) classified for easy parallel connection ■ Ultra fast soft recovery antiparallel diode 3 2 1 Applications TO-247 ■ Welding ■ High frequency converters ■ Power factor correction Description Figure 1. Internal schemati

5.31. stgw35hf60wdi.pdf Size:1050K _igbt

STGW39NC60VD
STGW39NC60VD

STGW35HF60WDI 35 A, 600 V ultrafast IGBT with low drop diode Features ■ Improved Eoff at elevated temperature ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Low VF soft recovery antiparallel diode Applications 3 2 1 ■ Welding TO-247 ■ Induction heating ■ Resonant converters Description This ultrafast IGBT is developed using a new Figure 1. Interna

Datasheet: STGW30NC60VD , STGW30NC60WD , STGW35HF60W , STGW35HF60WD , STGW35HF60WDI , STGW35NB60SD , STGW35NC120HD , STGW38IH130D , IRGB20B60PD1 , STGW40N120KD , STGW40NC60KD , STGW40NC60V , STGW40NC60W , STGW40NC60WD , STGW45HF60WD , STGW45HF60WDI , STGW45NC60VD .

 


STGW39NC60VD
  STGW39NC60VD
  STGW39NC60VD
  STGW39NC60VD
 
STGW39NC60VD
  STGW39NC60VD
  STGW39NC60VD
  STGW39NC60VD
 

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