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STGW39NC60VD IGBT (IC) Datasheet. Cross Reference Search. STGW39NC60VD Equivalent

Type Designator: STGW39NC60VD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 250W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.7V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 30A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

STGW39NC60VD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGW39NC60VD PDF doc:

1.1. stgw39nc60vd.pdf Size:425K _st

STGW39NC60VD
STGW39NC60VD

STGW39NC60VD 40 A - 600 V - very fast IGBT Features ¦ Low CRES / CIES ratio (no cross conduction susceptibility) ¦ IGBT co-packaged with ultra fast free-wheeling diode 3 Applications 2 1 ¦ High frequency inverters TO-247 ¦ UPS ¦ Motor drivers ¦ Induction heating Description Figure 1. Internal schematic diagram This IGBT utilizes the advanced PowerMESH™ process resulting in an

5.1. stgw35nc120hd.pdf Size:496K _st

STGW39NC60VD
STGW39NC60VD

STGW35NC120HD 32 A - 1200 V - very fast IGBT Features ¦ Low on-losses ¦ Low on-voltage drop (VCE(sat)) ¦ High current capability ¦ High input impedance (voltage driven) ¦ Low gate charge 3 2 ¦ Ideal for soft switching application 1 TO-247 long leads Application ¦ Induction heating ¦ High frequency inverters ¦ UPS Figure 1. Internal schematic diagram Description This IGBT utilize

5.2. stgw30nc60wd.pdf Size:542K _st

STGW39NC60VD
STGW39NC60VD

STGW30NC60WD 30 A, 600 V ultra fast IGBT Features ¦ High frequency operation ¦ Lower CRES / CIES ratio (no cross-conduction susceptibility) ¦ Very soft ultra fast recovery antiparallel diode Applications 3 2 1 ¦ High frequency motor controls, inverters, UPS TO-247 ¦ HF, SMPS and PFC in both hard switch and resonant topologies Description This IGBT utilizes the advanced Power MES

5.3. stgw30nb60h.pdf Size:300K _st

STGW39NC60VD
STGW39NC60VD

STGW30NB60H ® N-CHANNEL 30A - 600V TO-247 PowerMESH? IGBT TYPE VCES VCE(sat) IC STGW30NB60H 600 V < 2.8 V 30 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (V ) CESAT LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 VERY HIGH FREQUENCY OPERATION 2 1 OFF LOSSES INCLUDE TAIL CURRENT DESCRIPTION Using the latest high voltage technology based TO-247 on a patented strip

5.4. stgw30nc60vd.pdf Size:335K _st

STGW39NC60VD
STGW39NC60VD

STGW30NC60VD 40 A, 600 V, very fast IGBT Features ¦ High current capability ¦ High frequency operation up to 50 KHz ¦ Very soft ultra fast recovery antiparallel diode Description 3 2 This IGBT utilizes the advanced Power MESH™ 1 process resulting in an excellent trade-off between switching performance and low on-state TO-247 long leads behavior. Applications ¦ High frequency inv

5.5. stgw30nc60kd.pdf Size:351K _st

STGW39NC60VD
STGW39NC60VD

STGW30NC60KD 30 A - 600 V - short circuit rugged IGBT Features ¦ Low on-voltage drop (VCE(sat)) ¦ Low Cres / Cies ratio (no cross conduction susceptibility) ¦ Short circuit withstand time 10 µs ¦ IGBT co-packaged with ultra fast free-wheeling diode 3 2 1 Applications TO-247 ¦ High frequency inverters ¦ Motor drivers Description Figure 1. Internal schematic diagram This IGBT uti

5.6. stgw38ih130d.pdf Size:694K _st

STGW39NC60VD
STGW39NC60VD

STGW38IH130D 33 A - 1300 V - very fast IGBT Features ¦ Low saturation voltage ¦ High current capability ¦ Low switching loss ¦ Low static and peak forward voltage drop free- wheeling diode 3 2 1 Applications TO-247 ¦ Induction cooking, microwave oven ¦ Soft switching application Description This IGBT utilizes the advanced PowerMESH™ Figure 1. Internal schematic diagram process

5.7. stgw30n90d.pdf Size:575K _st

STGW39NC60VD
STGW39NC60VD

STGW30N90D 30 A, 900 V very fast IGBT Features ¦ Low on-losses ¦ Low on-voltage drop (VCE(sat)) ¦ High current capability ¦ Low gate charge ¦ Ideal for soft switching application 3 2 1 Application TO-247 ¦ Induction heating Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off Figure 1. Internal schematic diagram between switching pe

5.8. stgw30nc120hd.pdf Size:308K _st

STGW39NC60VD
STGW39NC60VD

STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH™ IGBT Features IC VCE(sat) Type VCES @25°C @100°C STGW30NC120HD 1200V < 2.75V 30A ¦ Low on-losses 3 ¦ Low on-voltage drop (Vcesat) 2 1 ¦ High current capability TO-247 ¦ High input impedance (voltage driven) ¦ Low gate charge ¦ Ideal for soft switching application Application Figure 1. Internal schematic diagram

5.9. stgw30n120kd.pdf Size:386K _st

STGW39NC60VD
STGW39NC60VD

STGW30N120KD 30 A - 1200 V - short circuit rugged IGBT Features ¦ Low on-losses ¦ High current capability ¦ Low gate charge ¦ Short circuit withstand time 10 µs ¦ IGBT co-packaged with ultra fast free-wheeling 3 diode 2 1 Application TO-247 ¦ Motor control Description This IGBT utilizes the advanced PowerMESH™ Figure 1. Internal schematic diagram process resulting in an excelle

5.10. stgw30nb60hd.pdf Size:328K _st

STGW39NC60VD
STGW39NC60VD

STGW30NB60HD N-CHANNEL 30A - 600V - TO-247 PowerMESH™ IGBT TYPE VCES VCE(sat) (Max) IC STGW30NB60HD 600 V < 2.8 V 30 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 VERY HIGH FREQUENCY OPERATION 2 1 OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TORBOSWITCH™ ANTIPARALLEL DIODE TO-247 DESCRIPTION INTERNAL SCHE

5.11. stgw35nb60sd.pdf Size:249K _st

STGW39NC60VD
STGW39NC60VD

STGW35NB60SD N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH™ IGBT General features VCE(sat) IC VCES Type (Max)@ 25°C @100°C STGW35NB60SD 600V < 1.7V 35A ¦ LOW ON-VOLTAGE DROP (VCEsat) 3 2 ¦ LOW INPUT CAPACITANCE 1 ¦ HIGH CURRENT CAPABILITY TO-247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has Internal schematic di

5.12. stgw35hf60w.pdf Size:384K _st

STGW39NC60VD
STGW39NC60VD

STGW35HF60W 35 A, 600 V ultra fast IGBT Preliminary data Features ¦ Improved Eoff at elevated temperature ¦ Minimal tail current ¦ Low conduction losses ¦ VCE(sat) classified for easy parallel connection 3 Applications 2 1 ¦ Welding TO-247 ¦ High frequency converters ¦ Power factor correction Description The STGW35HF60W is based on a new Figure 1. Internal schematic diagram adv

5.13. stgw35hf60wd.pdf Size:449K _st

STGW39NC60VD
STGW39NC60VD

STGW35HF60WD 35 A, 600 V ultra fast IGBT Features ¦ Improved Eoff at elevated temperature ¦ Minimal tail current ¦ Low conduction losses ¦ VCE(sat) classified for easy parallel connection ¦ Ultra fast soft recovery antiparallel diode 3 2 1 Applications TO-247 ¦ Welding ¦ High frequency converters ¦ Power factor correction Description Figure 1. Internal schematic diagram The STGW

5.14. stgw35hf60wdi.pdf Size:346K _st

STGW39NC60VD
STGW39NC60VD

STGW35HF60WDI 35 A, 600 V ultra fast IGBT Features ¦ Improved Eoff at elevated temperature ¦ Low CRES / CIES ratio (no cross-conduction susceptibility) ¦ Low VF soft recovery antiparallel diode Applications 3 2 1 ¦ Welding TO-247 ¦ Induction heating ¦ Resonant converters Description The "HF" series is based on a new planar Figure 1. Internal schematic diagram technology concep

5.15. stgw35nb60s.pdf Size:268K _st

STGW39NC60VD
STGW39NC60VD

STGW35NB60S N-channel 35A - 600V - TO-247 Low drop PowerMESH™ IGBT Features VCE(sat) IC Type VCES (Max)@ 25°C @100°C STGW35NB60S 600V < 1.7V 35A ¦ Low on-voltage drop (VCEsat) ¦ Low input capacitance ¦ High current capability TO-247 Description Internal schematic diagram Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an a

See also transistors datasheet: STGW30NC60VD , STGW30NC60WD , STGW35HF60W , STGW35HF60WD , STGW35HF60WDI , STGW35NB60SD , STGW35NC120HD , STGW38IH130D , IRGB20B60PD1 , STGW40N120KD , STGW40NC60KD , STGW40NC60V , STGW40NC60W , STGW40NC60WD , STGW45HF60WD , STGW45HF60WDI , STGW45NC60VD .

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