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IKW50N60T
IGBT Transistor Datasheet. Parameters and Characteristics. Type Designator: IKW50N60T
Type of IGBT channel: N-Channel
Maximum power dissipation (Pc) of IGBT transistor, W: 333W
Maximum collector-emitter voltage |Uce|, V: 600V
Collector-emitter saturation voltage |Ucesat|, V: 1.5V
Maximum gate-emitter voltage |Ueg|, V:
Maximum collector current |Ic|, A: 80A
Maximum junction temperature (Tj), °C:
Rise time, nS:
Maximum collector capacity (Cc), pF:
Package: TO247
Equivalent transistors for IKW50N60T
IKW50N60T
PDF document for downloads:
1.1. ikw50n60trev2_4g.pdf Size:412K _infineon |
| IKW50N60T
TrenchStop® Series q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
G
E
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
PG-TO-247-3
- very high switching speed
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package
IKW50N60T 600V 50A 1.5V K50T60 PG-TO-247-3
175°C
Maximum Rati |
2.1. ikw50n60h3_rev1_1g.pdf Size:1642K _infineon |
| IGBT
High speed DuoPack: IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel diode
IKW50N60H3
600V high speed switching series third generation
Datasheet
Industrial & Multimarket
IKW50N60H3
High speed switching series third generation
High speed IGBT in Trench and Fieldstop technology
C
Features:
TRENCHSTOPTM technology offering
• very low V
CEsat
• low EMI
• maximum junction temperature 175°C
G
• qualified according to JEDEC for target applications
E
• Pb-free lead plating; RoHS compliant
• complete product spectrum and PSpice Models:
http://www.infineon.com/igbt/
Applications:
• uninterruptible power supplies
• welding converters
• converters with high switching frequency
Key Performance and Package Parameters
Type V I V , T =25°C T Marking Package
Type V I V , T =25°C T Marking Package
Type VV II VV , =25°C TT Marking Package
Type , TT =25°C Marking Package
IKW50N60H3 600V 50A 1.85V 175°C K50H603 PG-TO247-3
Rev. 1.1 20 |
See also transistors datasheet: IKB06N60T
, IKA10N60T
, IKB10N60T
, IKA15N60T
, IKB15N60T
, IKB20N60T
, IKW20N60T
, IKW30N60T
, G20N60B3D
, IKW75N60T
, SKB02N120
, SKW07N120
, SKW15N120
, SKW25N120
, SKB02N60
, SKB04N60
, SKA06N60
. Keywords| IKW50N60T
Datasheet | IKW50N60T
Datenblatt | IKW50N60T
RoHS | IKW50N60T
Distributor | | IKW50N60T
Application Notes | IKW50N60T
Component | IKW50N60T
Circuit | IKW50N60T
Schematic | | IKW50N60T
Equivalent | IKW50N60T
Cross Reference | IKW50N60T
Data Sheet | IKW50N60T
Fiche Technique |
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