IGBT Datasheet


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IKW50N60T
  IKW50N60T
  IKW50N60T
 
IKW50N60T
  IKW50N60T
  IKW50N60T
 
IKW50N60T
  IKW50N60T
 
 
List
10N40C1D ..APT50GF120LR
APT50GF60AR ..FGPF4533
FGPF4536 ..GT5G101
GT5G102 ..HGTD7N60B3S
HGTD7N60C3 ..HGTP7N60A4D
HGTP7N60B3 ..IKW25T120
IKW30N100T ..IRG4PH30KD
IRG4PH40K ..IRGP4066D-E
IRGP4068D ..IXDN50N120AU1
IXDN55N120 ..IXGH15N120BD1
IXGH15N120C ..IXGH40N120C3
IXGH40N120C3D1 ..IXGN200N60B3
IXGN320N60A3 ..IXGR60N60B2
IXGR60N60B2D1 ..IXGX32N170AH1
IXGX32N170H1 ..IXSP24N60B
IXSQ10N60B2D1 ..MGS05N60D
MGS13002D ..MIXA80W1200TED
MIXA80W1200TED ..MWI80-12T6K
NGB15N41CLT4 ..RJP60D0DPP-M0
RJP60F0DPE ..SGU15N40L
SGU1N60XFD ..SKM40GD123D
SKM40GD124D ..STGB10NC60K
STGB10NC60KD ..STGW30N120KD
STGW30N90D ..VWI35-06P1
 
IKW50N60T All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

IKW50N60T IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IKW50N60T

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 333W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.5V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 80A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for IKW50N60T

IKW50N60T PDF document for downloads:

1.1. ikw50n60trev2_4g.pdf Size:412K _infineon

IKW50N60T
 Datasheet IKW50N60T
 Equivalent IKW50N60T TrenchStop® Series q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs G E • Designed for : - Frequency Converters - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior PG-TO-247-3 - very high switching speed • Positive temperature coefficient in VCE(sat) • Low EMI • Low Gate Charge • Very soft, fast recovery anti-parallel EmCon HE diode • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package IKW50N60T 600V 50A 1.5V K50T60 PG-TO-247-3 175°C Maximum Rati

2.1. ikw50n60h3_rev1_1g.pdf Size:1642K _infineon

IKW50N60T
 Datasheet IKW50N60T
 Equivalent IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW50N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IKW50N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features: TRENCHSTOPTM technology offering • very low V CEsat • low EMI • maximum junction temperature 175°C G • qualified according to JEDEC for target applications E • Pb-free lead plating; RoHS compliant • complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Applications: • uninterruptible power supplies • welding converters • converters with high switching frequency Key Performance and Package Parameters Type V I V , T =25°C T Marking Package Type V I V , T =25°C T Marking Package Type VV II VV , =25°C TT Marking Package Type , TT =25°C Marking Package IKW50N60H3 600V 50A 1.85V 175°C K50H603 PG-TO247-3 Rev. 1.1 20

See also transistors datasheet: IKB06N60T , IKA10N60T , IKB10N60T , IKA15N60T , IKB15N60T , IKB20N60T , IKW20N60T , IKW30N60T , G20N60B3D , IKW75N60T , SKB02N120 , SKW07N120 , SKW15N120 , SKW25N120 , SKB02N60 , SKB04N60 , SKA06N60 .

Keywords

 IKW50N60T Datasheet  IKW50N60T Datenblatt  IKW50N60T RoHS  IKW50N60T Distributor
 IKW50N60T Application Notes  IKW50N60T Component  IKW50N60T Circuit  IKW50N60T Schematic
 IKW50N60T Equivalent  IKW50N60T Cross Reference  IKW50N60T Data Sheet  IKW50N60T Fiche Technique

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