SKW15N120 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: SKW15N120

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 198W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 3.7V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 30A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for SKW15N120

SKW15N120 PDF document for downloads:

1.1. skw15n120_rev2_2g.pdf Size:342K _infineon

SKW15N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: G - Motor controls E - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-247-3 - parallel switching capability • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC Eoff Tj Marking Package SKW15N120 1200V 15A 1.5mJ K15N120 PG-TO-247-3 150°C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current IC A 30 TC = 25°C 15 TC = 100°C Pulsed collector current, tp limited by Tjmax ICpul s 52 Turn off safe operating area - 52 VCE ? 1200V, Tj ? 150°C Diode forward current IF 32 TC = 25°C 15 TC

4.1. skp15n60_skw15n60_rev2_3g.pdf Size:371K _infineon

SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-247-3 PG-TO-220-3-1 - parallel switching capability (TO-220AB) • Very soft, fast recovery anti-parallel EmCon diode • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1 for target applications • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat) Tj Marking Package SKP15N60 600V 15A 2.3V K15N60 PG-TO-220-3-1 150°C SKW15N60 600V 15A 2.3V K15N60 PG-TO-247-3 150°C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current IC A

See also transistors datasheet: IKB15N60T , IKB20N60T , IKW20N60T , IKW30N60T , IKW50N60T , IKW75N60T , SKB02N120 , SKW07N120 , IRGR3B60KD2 , SKW25N120 , SKB02N60 , SKB04N60 , SKA06N60 , SKB06N60 , SKW10N60A , SKB15N60 , SKW15N60 .

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